CM1213-06SM

CM1213
http://onsemi.com
4
PERFORMANCE INFORMATION
Input Channel Capacitance Performance Curves
Figure 1. Typical Variation of C
IN
vs. V
IN
(f = 1 MHz, V
P
= 3.3 V, V
N
= 0 V, 0.1 mF Chip Capacitor between V
P
and V
N
, 255C)
Figure 2. Typical Variation of C
IN
vs. Temp
(f = 1 MHz, V
IN
= 30 mV, V
P
= 3.3 V, V
N
= 0 V, 0.1 mF Chip Capacitor between V
P
and V
N
)
CM1213
http://onsemi.com
5
PERFORMANCE INFORMATION (Cont’d)
Typical Filter Performance (Nominal Conditions unless Specified Otherwise, 50 Ohm Environment)
Figure 3. Insertion Loss (S21) vs. Frequency (0 V DC Bias, V
P
=3.3 V)
Figure 4. Insertion Loss (S21) vs. Frequency (2.5 V DC Bias, V
P
=3.3 V)
CM1213
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6
APPLICATION INFORMATION
Design Considerations
In order to realize the maximum protection against ESD pulses, care must be taken in the PCB layout to minimize parasitic
series inductances on the Supply/Ground rails as well as the signal trace segment between the signal input (typically
a connector) and the ESD protection device. Refer to Application of Positive ESD Pulse between Input Channel and Ground,
which illustrates an example of a positive ESD pulse striking an input channel. The parasitic series inductance back to power
supply is represented by L
1
and L
2
. The voltage V
CL
on the line being protected is:
V
CL
= Fwd voltage drop of D
1
+ V
SUPPLY
+ L
1
x d(I
ESD
) / dt + L
2
x d(I
ESD
) / dt
where I
ESD
is the ESD current pulse, and V
SUPPLY
is the positive supply voltage.
An ESD current pulse can rise from zero to its peak value in a very short time. As an example, a level 4 contact discharge
per the IEC6100042 standard results in a current pulse that rises from zero to 30 Amps in 1 ns. Here d(I
ESD
)/dt can be
approximated by DI
ESD
/Dt, or 30/(1x10
9
). So just 10 nH of series inductance (L
1
and L
2
combined) will lead to a 300 V
increment in V
CL
!
Similarly for negative ESD pulses, parasitic series inductance from the V
N
pin to the ground rail will lead to drastically
increased negative voltage on the line being protected.
The CM1213 has an integrated Zener diode between V
P
and V
N
. This greatly reduces the effect of supply rail inductance
L
2
on V
CL
by clamping V
P
at the breakdown voltage of the Zener diode. However, for the lowest possible V
CL
, especially when
V
P
is biased at a voltage significantly below the Zener breakdown voltage, it is recommended that a 0.22 mF ceramic chip
capacitor be connected between V
P
and the ground plane.
As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected
electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the V
P
pin of the Protection
Array as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the
ESD device to minimize stray series inductance.
Additional Information
See also ON Semiconductor Application Note, “Design Considerations for ESD Protection”, in the Applications section.
POSITIVE SUPPLY RAIL
CHANNEL
INPUT
GROUND RAIL
CHASSIS GROUND
SYSTEM OR
CIRCUITRY
BEING
PROTECTED
LINE BEING
PROTECTED
ONE
CHANNEL
OF
CM1213
D
2
D
1
L
1
L
2
V
CC
V
CL
V
N
V
P
0.22 mF
PATH OF ESD CURRENT PULSE I
ESO
0 A
25 A
Figure 5. Application of Positive ESD Pulse between Input Channel and Ground

CM1213-06SM

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS DIODE 3.3V 8.8V 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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