T1235-600R Datasheet T1235-600R | P1-P3

September 2007 Rev 9 1/12

12

BTA12, BTB12, T12xx

12 A Snubberless™, logic level and standard triacs

Features

■ Medium current triac

■ Low thermal resistance with clip bonding

■ Low thermal resistance insulation ceramic for

insulated BTA

■ High commutation (4Q) or very high

commutation (3Q) capability

■ BTA series UL1557 certified (File ref: 81734)

■ Packages are RoHS ( 2002/95/EC) compliant

Applications

ON/OFF or phase angle function in applications

such as static relays, light dimmers and appliance

motors speed controllers.

The snubberless versions (BTA/BTB...W and T12

series) are especially recommended for use on

inductive loads, because of their high

commutation performances. The BTA series

provides an insulated tab (rated at 2500 V RMS).

Description

Available either in through-hole or surface-mount

packages, the BTA12, BTB12 and T12xx triac

series is suitable for general purpose mains

power AC switching.

Order code

See Ordering information on page 11

TM: Snubberless is a trademark of STMicroelectronics

A2

A1

G

A2

A1

G

A2

A1

G

A2

A1

G

A2

A1

D

2

PAK

(T12-G)

TO-220AB Insulated

(BTA12)

TO-220AB

(BTB12)

I

2

PAK

(T12-R)

Table 1. Device summary

Symbol Parameter T12xx BTA12

(1)

BTB12

I

T(RMS)

RMS on-state current 12 12 12

V

DRM

/V

RRM

Repetitive peak off-state voltage 600/800 600/800 600/800

I

GT

(Snubberless) Triggering gate current 10/35/50 5/10/35/50 5/10/35/50

I

GT

(Standard) Triggering gate current - 35/50 35/50

1.

Insulated

www.st.com

Characteristics BTA12, BTB12, T12xx

2/12

1 Characteristics

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

T(RMS)

RMS on-state current

(full sine wave)

I

2

PAK / D

2

PA K /

TO-220AB

T

c

= 105° C

12 A

TO-220AB Ins. T

c

= 90° C

I

TSM

Non repetitive surge peak on-state

current (full cycle, T

j

initial = 25° C)

F = 50 Hz t = 20 ms 120

A

F = 60 Hz t = 16.7 ms 126

I

2

tI

2

t Value for fusing t

p

= 10 ms 78 A

²

s

dI/dt

Critical rate of rise of on-state current

I

G

= 2 x I

GT

, t

r

≤ 100 ns

F = 120 Hz T

j

= 125° C 50 A/µs

V

DSM

/V

RSM

Non repetitive surge peak off-state

voltage

t

p

= 10 ms T

j

= 25° C

V

DRM

/V

RRM

+ 100

V

I

GM

Peak gate current t

p

= 20 µs T

j

= 125° C 4 A

P

G(AV)

Average gate power dissipation T

j

= 125° C 1 W

T

stg

T

j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 3. Electrical characteristics (T

j

= 25°C, unless otherwise specified)

Snubberless and logic level (3 quadrants)

Symbol Test conditions Quadrant

T12xx BTA12 / BTB12

Unit

T1210 T1235 T1250 TW SW CW BW

I

GT

(1)

1. Minimum I

GT

is guaranted at 5% of I

GT

max

V

D

= 12 V

R

L

= 30 Ω

I - II - III MAX. 10 35 50 5 10 35 50 mA

V

GT

I - II - III MAX. 1.3 V

V

GD

V

D

= V

DRM

R

L

= 3.3 kΩ

T

j

= 125° C

I - II - III MIN. 0.2 V

I

H

(2)

2. for both polarities of A2 referenced to A1

I

T

= 100 mA MAX. 15 35 50 10 15 35 50 mA

I

L

I

G

= 1.2 I

GT

I - III

MAX.

25 50 70 10 25 50 70

mA

II 30 60 80 15 30 60 80

dV/dt

(2)

V

D

= 67 %V

DRM

gate open

T

j

= 125° C

MIN. 40 500 1000 20 40 500 1000 V/µs

(dI/dt)c

(2)

(dV/dt)c = 0.1 V/µs

T

j

= 125° C

MIN.

6.5 3.5 6.5

A/ms

(dV/dt)c = 10 V/µs

T

j

= 125° C

2.9 1 2.9

Without snubber

T

j

= 125° C

6.5 12 6.5 12

BTA12, BTB12, T12xx Characteristics

3/12

Table 4. Electrical characteristics (T

j

= 25°C, unless otherwise specified)

standard (4 quadrants)

Symbol Test Conditions Quadrant

BTA12 / BTB12

Unit

CB

I

GT

(1)

1. Minimum I

GT

is guaranted at 5% of I

GT

max.

V

D

= 12 V R

L

= 30 Ω

I - II - III

IV

MAX.

25

50

100

mA

V

GT

ALL MAX. 1.3 V

V

GD

V

D

= V

DRM

R

L

= 3.3 kΩ T

j

= 125° C ALL MIN. 0.2 V

I

H

(2)

2. for both polarities of A2 referenced to A1.

I

T

= 500 mA MAX. 25 50 mA

I

L

I

G

= 1.2 I

GT

I - III - IV

MAX.

40 50

mA

II 80 100

dV/dt

(2)

V

D

= 67% V

DRM

gate open T

j

= 125° C MIN. 200 400 V/µs

(dV/dt)c

(2)

(dI/dt)c = 5.3 A/ms T

j

= 125° C MIN. 5 10 V/µs

Table 5. Static characteristics

Symbol Test conditions Value Unit

V

T

(1)

1. for both polarities of A2 referenced to A1

I

TM

= 17 A t

p

= 380 µs T

j

= 25° C MAX. 1.55 V

V

t0

(1)

Threshold voltage T

j

= 125° C MAX. 0.85 V

R

d

(1)

Dynamic resistance T

j

= 125° C MAX. 35 mΩ

I

DRM

I

RRM

V

DRM

= V

RRM

T

j

= 25° C

MAX.

5µA

T

j

= 125° C 1 mA

Table 6. Thermal resistance

Symbol Parameter Value Unit

R

th(j-c)

Junction to case (AC)

I

2

PAK / D

2

PAK / TO-220AB 1.4

°C/W

TO-220AB insulated 2.3

R

th(j-a)

Junction to ambient S

(1)

= 1 cm

2

1. Copper surface under tab.

D

2

PA K 4 5

°C/W

TO-220AB / I

2

PA K

TO-220AB insulated

60

T1235-600R

T1235-600R

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