BTA12, BTB12, T12xx Characteristics
5/12
Figure 7. Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
p
< 10 ms and corresponding
value of I
2
t
Figure 8. Figure 8: Relative variation of gate
trigger current, holding current and
latching current versus junction
temperature (typical values)
0.01 0.10 1.00 10.00
10
100
1000
I (A), I t (A s)
TSM
22
t (ms)
p
T initial=25°C
j
I
TSM
dI/dt limitation:
50A/µs
I t
2
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I,I[T] /
GT H L j
I ,I ,I [T =25°C]
GT H L j
I
GT
I
H
& I
L
Figure 9. Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(BW/CW/T1210/T1235)
Figure 10. Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values) (TW)
0.1 1.0 10.0 100.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
T1210/SW
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
T1235/T1250/CW/BW
C
B
0.1
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0 10.0 100.0
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
TW
Figure 11. Relative variation of critical rate of
decrease of main current versus
junction temperature
Figure 12. D
2
PAK thermal resistance junction
to ambient versus copper surface
under tab (printed circuit board
FR4, copper thickness: 35 µm)
0 25 50 75 100 125
0
1
2
3
4
5
6
(dI/dt)c [T ] / pecified]
j
(dI/dt)c [T s
j
T (°C)
j
0 4 8 1216202428323640
0
10
20
30
40
50
60
70
80
S(cm²)
R (°C/W)
th(j-a)
DPAK
2
