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BUH51G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 5
1 Publication Order Number:
BUH51/D
BUH51
SWITCHMODEt NPN Silicon
Planar Power Transistor
The BUH51 has an application specific state−of−art die designed for
use in 50 W Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the startup conditions or under a short
circuit across the load.
• Improved Efficiency Due to the Low Base Drive Requirements:
High and Flat DC Current Gain h
FE
Fast Switching
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings:
Machine Model, C
Human Body Model, 3B
w This device is available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage V
CEO
500 Vdc
Collector−Base Breakdown Voltage V
CBO
800 Vdc
Collector−Emitter Breakdown Voltage V
CES
800 Vdc
Emitter−Base Voltage V
EBO
10 Vdc
Collector Current − Continuous
− Peak (Note 1)
I
C
I
CM
3.0
8.0
Adc
Base Current − Continuous
Base Current − Peak (Note 1)
I
B
I
BM
2.0
4.0
Adc
*Total Device Dissipation @ T
C
= 25_C
*Derate above 25°C
P
D
50
0.4
Watt
W/_C
Operating and Storage Temperature T
J
, T
stg
– 65 to
150
_C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case R
θ
JC
2.5
_C/W
Thermal Resistance, Junction−to−Ambient R
θ
JA
100
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from case for 5 seconds
T
L
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Device Package Shipping
ORDERING INFORMATION
BUH51 TO−225
TO−225
CASE 77
STYLE 3
500 Units/Box
2
1
3
MARKING DIAGRAM
YWW
BUH51
Y = Year
WW = Work Week
1 BASE
2 COLLECTOR
3 EMITTER
http://onsemi.com
POWER TRANSISTOR
3.0 AMPERE
800 VOLTS
50 WATTS
BUH51
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mA, L = 25 mH)
V
CEO(sus)
500 550 − Vdc
Collector−Base Breakdown Voltage
(I
CBO
= 1.0 mA)
V
CBO
800 950 − Vdc
Emitter−Base Breakdown Voltage
(I
EBO
= 1.0 mA)
V
EBO
10 12.5 − Vdc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, I
B
= 0
I
CEO
− − 100
mAdc
Collector Cutoff Current
(V
CE
= Rated V
CES
, V
EB
= 0)
@ T
C
= 25°C
@ T
C
= 125°C
I
CES
−
−
−
−
100
1000
mAdc
Collector Base Current
(V
CB
= Rated V
CBO
, V
EB
= 0
@ T
C
= 25°C
@ T
C
= 125°C
I
CBO
−
−
−
−
100
1000
mAdc
Emitter−Cutoff Current
(V
EB
= 9.0 Vdc, I
C
= 0)
I
EBO
− − 100
mAdc
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
@ T
C
= 25°C
@ T
C
= 125°C
V
BE(sat)
−
−
0.92
0.8
1.1
−
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
@ T
C
= 25°C
@ T
C
= 125°C
V
CE(sat)
−
−
0.3
0.32
0.5
0.6
Vdc
DC Current Gain (I
C
= 1.0 Adc, V
CE
= 1.0 Vdc) @ T
C
= 25°C
@ T
C
= 125°C
h
FE
8.0
6.0
10
8.0
−
−
−
DC Current Gain (I
C
= 2.0 Adc, V
CE
= 5.0 Vdc) @ T
C
= 25°C
@ T
C
= 125°C
5.0
4.0
7.5
6.2
−
−
−
DC Current Gain (I
C
= 0.8 Adc, V
CE
= 5.0 Vdc) @ T
C
= 25°C
@ T
C
= 125°C
10
8.0
14
13
−
−
−
DC Current Gain (I
C
= 10 mAdc, V
CE
= 5.0 Vdc) @ T
C
= 25°C
@ T
C
= 125°C
14
18
20
25
−
−
−
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 3.0 ms
after rising I
B1
reaches
90% of final I
B1
I
C
= 1.0 Adc, I
B1
= 0.2 Adc
V
CC
= 300 V
@ T
C
= 25°C
V
CE(dsat)
− 1.7 − V
@ T
C
= 125°C − 6.0 − V
I
C
= 2.0 Adc, I
B1
= 0.4 Adc
V
CC
= 300 V
@ T
C
= 25°C − 5.1 − V
@ T
C
= 125°C − 15 − V
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
f
T
− 23 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
− 34 100 pF
Input Capacitance
(V
EB
= 8.0 Vdc, f = 1.0 MHz)
C
ib
− 200 500 pF
BUH51
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms)
Turn−on Time
I
C
= 1.0 Adc, I
B1
= 0.2 Adc
I
B2
= 0.2 Adc
V
CC
= 300 Vdc
@ T
C
= 25°C
@ T
C
= 125°C
t
on
−
−
110
125
150
−
ns
Turn−off Time @ T
C
= 25°C
@ T
C
= 125°C
t
off
−
−
3.5
4.1
4.0
−
ms
Turn−on Time
I
C
= 2.0 Adc, I
B1
= 0.4 Adc
I
B2
= 0.4 Adc
V
CC
= 300 Vdc
@ T
C
= 25°C
@ T
C
= 125°C
t
on
−
−
700
1250
1000
−
ns
Turn−off Time @ T
C
= 25°C
@ T
C
= 125°C
t
off
−
−
1.75
2.1
2.0
−
ms
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, V
CC
= 15 V, L = 200 mH)
Fall Time
I
C
= 1.0 Adc
I
B1
= 0.2 Adc
I
B2
= 0.2 Adc
@ T
C
= 25°C
@ T
C
= 125°C
t
fi
−
−
200
320
300
−
ns
Storage Time @ T
C
= 25°C
@ T
C
= 125°C
t
si
−
−
3.4
4.0
3.75
−
ms
Crossover Time @ T
C
= 25°C
@ T
C
= 125°C
t
c
−
−
350
640
500
−
ns
Fall Time
I
C
= 2.0 Adc
I
B1
= 0.4 Adc
I
B2
= 0.4 Adc
@ T
C
= 25°C
@ T
C
= 125°C
t
fi
−
−
140
300
200
−
ns
Storage Time @ T
C
= 25°C
@ T
C
= 125°C
t
si
−
−
2.3
2.8
2.75
−
ms
Crossover Time @ T
C
= 25°C
@ T
C
= 125°C
t
c
−
−
400
725
600
−
ns
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1.0 V
100
10
1
1010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
V
CE
= 1 V
Figure 2. DC Current Gain @ 3.0 V
100
10
1
1010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
V
CE
= 3 V
0.010.01
P1-P3P4-P6P7-P9P10-P10

BUH51G

Mfr. #:
Buy BUH51G
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 500V 3A TO-225
Lifecycle:
New from this manufacturer.
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