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BUH51G

P1-P3P4-P6P7-P9P10-P10
BUH51
http://onsemi.com
4
TYPICAL STATIC CHARACTERISTICS
Figure 3. DC Current Gain @ 5.0 V Figure 4. Collector−Emitter Saturation Voltage
10
1
0.01
1010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
I
C
/I
B
= 5
V
CE
, VOLTAGE (VOLTS)
Figure 5. Collector−Emitter Saturation Voltage
10
1
0.1
100.10.001
I
C
, COLLECTOR CURRENT (AMPS)
Figure 6. Base−Emitter Saturation Region
1.5
0.5
0
100.10.001
I
C
, COLLECTOR CURRENT (AMPS)
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
V
CE
, VOLTAGE (VOLTS)
V
BE
, VOLTAGE (VOLTS)
1
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
0.1
I
C
/I
B
= 10
1
I
C
/I
B
= 5
Figure 7. Base−Emitter Saturation Region
1.5
0.5
0
1010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
V
BE
, VOLTAGE (VOLTS)
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
Figure 8. Collector Saturation Region
2
0.5
0
1010.01
I
B
, BASE CURRENT (A)
1
1.5
100
10
1
1010.10.001
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
T
J
= −20°C
V
CE
= 5 V
0.01 0.01
0.01
1
0.01
1
0.01
I
C
/I
B
= 10
V
CE
, VOLTAGE (VOLTS)
0.1
T
J
= 25°C
V
CE(sat)
(I
C
= 500 mA)
1 A
4 A
2 A
3 A
BUH51
http://onsemi.com
5
t, TIME (s)μ
TYPICAL STATIC CHARACTERISTICS
Figure 9. Capacitance
1000
10
100101
V
R
, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
100
C
ib
T
J
= 25°C
f
(test)
= 1 MHz
C
ob
Figure 10. Resistive Breakdown
700
400
10000010010
R
BE
(Ω)
BVCER (VOLTS)
T
J
= 25°C
BVCER @ 10 mA
1000
900
800
600
500
BVCER(sus) @ 200 mA, 25 mH
100001000
TYPICAL SWITCHING CHARACTERISTICS
Figure 11. Resistive Switching, t
on
2500
1000
0
310
I
C
, COLLECTOR CURRENT (AMPS)
1500
500
T
J
= 125°C
T
J
= 25°C
I
B1
= I
B2
V
CC
= 300 V
PW = 40 μs
Figure 12. Resistive Switch Time, t
off
10
4
0
310
I
C
, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Storage Time, t
si
7
3
1
310
I
C
, COLLECTOR CURRENT (AMPS)
5
6
8
2
T
J
= 125°C
T
J
= 25°C
I
C
/I
B
= 5
T
J
= 125°C
T
J
= 25°C
Figure 13 Bis. Inductive Storage Time, t
si
4
0
21.50.5
I
C
, COLLECTOR CURRENT (AMPS)
2
1
1
T
J
= 125°C
T
J
= 25°C
2000
2
I
C
/I
B
= 5
I
C
/I
B
= 5
t, TIME (ns)
2
I
B1
= I
B2
V
CC
= 300 V
PW = 40 μs
t, TIME (s)μ
t, TIME (s)μ
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 μH
3
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 μH
I
C
/I
B
= 10
2
BUH51
http://onsemi.com
6
TYPICAL SWITCHING CHARACTERISTICS
Figure 14. Inductive Storage Time,
t
c
& t
fi
@ I
C
/I
B
= 5
1000
400
0
2.510.5
I
C
, COLLECTOR CURRENT (AMPS)
2
800
200
1.5
T
J
= 125°C
T
J
= 25°C
Figure 15. Inductive Storage Time,
t
c
& t
fi
@ I
C
/I
B
= 10
800
0
2.51.50.5
I
C
, COLLECTOR CURRENT (AMPS)
t, TIME (ns)
200
1
T
J
= 125°C
T
J
= 25°C
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 μH
t
c
t
fi
600
400
t, TIME (ns)
2
600
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 μH
t
c
t
fi
4
1
1042
h
FE
, FORCED GAIN
8
3
6
T
J
= 125°C
T
J
= 25°C
Figure 16. Inductive Storage Time
2
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 μH
Figure 17. Inductive Fall Time
450
0
103
h
FE
, FORCED GAIN
350
t
fi
, FALL TIME (ns)
400
250
150
50
467
T
J
= 125°C
T
J
= 25°C
300
200
100
, STORAGE TIME (t
si
μs)
I
C
= 2 A
I
C
= 0.8 A
589
I
Boff
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 μH
I
C
= 2 A
I
C
= 0.8 A
Figure 18. Inductive Crossover Time
800
300
100
h
FE
, FORCED GAIN
600
t
c
, CROSSOVER TIME (ns)
700
400
500
200
1034 6 7589
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 μH
T
J
= 125°C
T
J
= 25°C
I
C
= 2 A
I
C
= 0.8 A
t
fi
t
fi
t
c
P1-P3P4-P6P7-P9P10-P10

BUH51G

Mfr. #:
Buy BUH51G
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 500V 3A TO-225
Lifecycle:
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