2004 Nov 04 3
NXP Semiconductors Product data sheet
40 V, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5540X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
4. Device mounted on a 7 cm
2
ceramic printed-circuit board, 1 cm
2
single-sided copper and tin-plated.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −40 V
V
CEO
collector-emitter voltage open base − −40 V
V
EBO
emitter-base voltage open collector − −6 V
I
CM
peak collector current t
p
≤ 1 ms − −10 A
I
CRP
repetitive peak collector current t
p
≤ 10 ms; δ ≤ 0.2 − −5 A
I
C
collector current (DC) − −4 A
I
BM
peak base current t
p
≤ 1 ms − −2 A
I
B
base current (DC) − −1 A
P
tot
total power dissipation T
amb
≤ 25 °C
t
p
≤ 10 ms; δ ≤ 0.2; note 1 − 2.5 W
note 1 − 0.55 W
note 2 − 1 W
note 3 − 1.4 W
note 4 − 1.6 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
