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PBSS4540X,135

P1-P3P4-P6P7-P9P10-P12P13-P14
2004 Nov 04 6
NXP Semiconductors Product data sheet
40 V, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5540X
006aaa233
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(5)
(6)
(7)
(8)
(9)
(10)
(1)
(2)
(3)
(4)
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
2
.
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(6)
(7)
(8)
(9)
(10)
(1)
(5)
(4)
(3)
(2)
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
2
.
2004 Nov 04 7
NXP Semiconductors Product data sheet
40 V, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5540X
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 A − − −100 nA
V
CB
= −30 V; I
E
= 0 A;
T
j
= 150 °C
− − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 A − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −0.5 A 250 − −
V
CE
= −2 V; I
C
= −1 A;
note
1
200 − −
V
CE
= −2 V; I
C
= −2 A;
note
1
150 − −
V
CE
= −2 V; I
C
= −5 A;
note
1
50 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −0.5 A; I
B
= −5 mA − − 120 mV
I
C
= −1 A; I
B
= −10 mA − − 170 mV
I
C
= −2 A; I
B
= −200 mA − − 160 mV
I
C
= −4 A; I
B
= −200 mA;
note
1
− − 340 mV
I
C
= −5 A; I
B
= −500 mA;
note
1
− − 375 mV
R
CEsat
equivalent on-resistance I
C
= −5 A; I
B
= −500 mA;
note
1
− 45 75 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= −4 A; I
B
= −200 mA;
note
1
− − −1.1 V
I
C
= −5 A; I
B
= −500 mA;
note
1
− − −1.2 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −2 A − − −1.0 V
f
T
transition frequency V
CE
= −10 V; I
C
= −0.1 A;
f
= 100 MHz
60 − − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= i
e
= 0 A;
f
= 1 MHz
− − 105 pF
2004 Nov 04 8
NXP Semiconductors Product data sheet
40 V, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5540X
V
CE
(V)
0 −2−1.5−0.5 −1
001aaa157
−4
−2
−6
−8
I
C
(A)
0
(1)
(2)
(3)
(4)
(5)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B1
= −11 mA.
(2) I
B2
= −22 mA.
(3) I
B3
= −33 mA.
(4) I
B4
= −44 mA.
(5) I
B5
= −55 mA.
001aaa158
−0.4
−0.8
−1.2
V
BE
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
(1) T
amb
= −55 °C. (2) T
amb
= 25 °C. (3) T
amb
= 100 °C.
V
CE
= −2 V.
001aaa159
400
600
200
800
1000
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
Fig.8 DC current gain as a function of collector
current; typical values.
(1) T
amb
= 100 °C. (2) T
amb
= 25 °C. (3) T
amb
= −55 °C.
V
CE
= −2 V.
001aaa160
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
10
−1
1
10
10
2
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
Fig.9 Equivalent on-resistance as a function of
collector current; typical values.
(1) T
amb
= 100 °C. (2) T
amb
= 25 °C. (3) T
amb
= −55 °C.
I
C
/I
B
= 20.
P1-P3P4-P6P7-P9P10-P12P13-P14

PBSS4540X,135

Mfr. #:
Buy PBSS4540X,135
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-13
Lifecycle:
New from this manufacturer.
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