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BSP75GTA

P1-P3P4-P6P7-P8
Issue 4 - May 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
BSP75G
60V self-protected low-side IntelliFET
TM
MOSFET switch
Summary
Continuous drain source voltage V
DS
=60V
On-state resistance 550m
⍀
Nominal load current 1.4A (V
IN
= 5V)
Clamping energy 550mJ
Ordering information
Device marking
BSP75G
Description
Self-protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
power MOSFET intended as a general purpose switch.
Features
• Short circuit protection with auto restart
• Over-voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input protection (ESD)
• High continuous current rating
• Load dump protection (actively protects load)
• Logic level input
Note:
The tab is connected to the drain pin, and must
be electrically isolated from the source pin.
Connection of significant copper to the tab is
recommended for best thermal performance.
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
BSP75GTA 7 12mm embossed 1,000
BSP75GTC 13 12mm embossed 4,000
SOT223
D
S
D
IN
BSP75G
Issue 4 - May 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Functional block diagram
Applications
• Especially suited for loads with a high in-rush current such as lamps and motors.
• All types of resistive, inductive and capacitive loads in switching applications.
•
␮C compatible power switch for 12V and 24V DC applications.
• Automotive rated.
• Replaces electromechanical relays and discrete circuits.
• Linear mode capability - the current-limiting protection circuitry is designed to de-activate at
low Vds, in order not to compromise the load current during normal operation. The design
maximum DC operating current is therefore determined by the thermal capability of the
package/board combination, rather than by the protection circuitry.
S
Over voltage
protection
Over current
protection
Over temperature
protection
Logic
Human body
ESD protection
D
IN
dV/dt
limitation
BSP75G
Issue 4 - May 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b) For a device surface mounted on FR4 board and measured at t<=10s.
(c) For a device mounted on FR4 board with the minimum copper required for electrical connections.
Parameter Symbol Limit Unit
Continuous drain-source voltage V
DS
60 V
Drain-source voltage for short circuit protection V
DS(SC)
36 V
Continuous input voltage V
IN
-0.2 ... +10 V
Peak input voltage V
IN
-0.2 ... +20 V
Operating temperature range T
j
, -40 to +150 °C
Storage temperature range T
stg
-55 to +150 °C
Power dissipation at T
A
=25°C
(a)
P
D
2.5 W
Continuous drain current @ V
IN
=10V; T
A
=25°C
(a)
I
D
1.6 A
Continuous drain current @ V
IN
=5V; T
A
=25°C
(a)
I
D
1.4 A
Pulsed drain current @ V
IN
=10V I
DM
5A
Continuous source current (body diode)
(a)
I
S
3A
Pulsed source current (body diode) I
S
5A
Unclamped single pulse inductive energy E
AS
550 mJ
Load dump protection V
LoadDump
80 V
Electrostatic discharge (human body model) V
ESD
4000 V
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 40/150/56
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a)
R
⍜JA
50 °C/W
Junction to ambient
(b)
R
⍜JA
24 °C/W
Junction to ambient
(c)
R
⍜JA
208 °C/W
P1-P3P4-P6P7-P8

BSP75GTA

Mfr. #:
Buy BSP75GTA
Manufacturer:
Diodes Incorporated
Description:
Power Switch ICs - Power Distribution 60V self-protected low-side MOSFET SW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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