BSP75G
Issue 4 - May 2006 5 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static characteristics
Drain-source clamp voltage V
DS(AZ)
60 70 75 V I
D
=10mA
Off-state drain current I
DSS
0.1 3 A V
DS
=12V, V
IN
=0V
Off-state drain current I
DSS
315A V
DS
=32V, V
IN
=0V
Input threshold voltage
(*)
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V.
V
IN(th)
12.1 VV
DS
=V
GS
, I
D
=1mA
Input current I
IN
0.7 1.2 mA V
IN
=+5V
Input current I
IN
1.5 2.7 mA V
IN
=+7V
Input current I
IN
47mAV
IN
=+10V
Static drain-source on-state
resistance
R
DS(on)
520 675 m⍀ V
IN
=+5V, I
D
=0.7A
Static drain-source on-state
resistance
R
DS(on)
385 550 m⍀ V
IN
=+10V, I
D
=0.7A
Current limit
(†)
(†) The drain current is limited to a reduced value when V
DS
exceeds a safe level.
I
D(LIM)
0.7 1.1 1.75 A V
IN
=+5V, V
DS
>5V
Current limit
(†)
I
D(LIM)
234AV
IN
=+10V, V
DS
>5V
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)t
on
2.2 10 sR
L
=22⍀, V
DD
=12V,
V
IN
=0 to +10V
Turn-off time (V
IN
to 90% I
D
)t
off
13 20 sR
L
=22⍀, V
DD
=12V,
V
IN
=+10V to 0V
Slew rate on (70 to 50% V
DD
)
-dV
DS
/dt
on
10 20 V/sR
L
=22⍀, V
DD
=12V,
V
IN
=0 to +10V
Slew rate off (50 to 70% V
DD
)dV
DS
/dt
off
3.2 10 V/s R
L
=22⍀, V
DD
=12V,
V
IN
=+10V to 0V
Protection functions
(‡)
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Required input voltage for
over temperature protection
V
PROT
4.5 V
Thermal overload trip
temperature
T
JT
150 175 °C
Thermal hysteresis 10 °C
Unclamped single pulse
inductive energy Tj=25°C
E
AS
550 mJ I
D(ISO)
=0.7A, V
DD
=32V
Unclamped single pulse
inductive energy Tj=150°C
E
AS
200 mJ I
D(ISO)
=0.7A, V
DD
=32V
Inverse diode
Source drain voltage V
SD
1V
IN
=0V, -I
D
=1.4A
