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SI3588DV-T1-GE3

P1-P3P4-P6P7-P8
Vishay Siliconix
Si3588DV
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs: 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
N-Channel 20
0.080 at V
GS
= 4.5 V
3.0
0.100 at V
GS
= 2.5 V
2.6
0.128 at V
GS
= 1.8 V
2.3
P-Channel - 20
0.145 at V
GS
= - 4.5 V
- 2.2
0.200 at V
GS
= - 2.5 V
- 1.8
0.300 at V
GS
= - 1.8 V
- 1.5
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2G2
S1S2
D1G1
Ordering Information: Si3588DV-T1-E3 (Lead (Pb)-free)
Si3588DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
G
1
S
1
N-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol
N-Channel P-Channel
Unit
5 s Steady State 5 s Steady State
Drain-Source Voltage
V
DS
20 - 20
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
3.0 2.5 - 2.2 - 0.57
A
T
A
= 70 °C
2.3 2.0 - 1.8 - 1.5
Pulsed Drain Current
I
DM
± 8
Continuous Source Current (Diode Conduction)
a
I
S
1.05 0.75 - 1.05 - 0.75
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.15 0.83 1.15 0.083
W
T
A
= 70 °C
0.73 0.53 0.73 0.53
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
93 110
°C/W
Steady State 130 150
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
90 90
www.vishay.com
2
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
Vishay Siliconix
Si3588DV
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
N-Ch 0.45
V
V
DS
= V
GS
, I
D
= - 250 µA
P-Ch - 0.45
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
N-Ch ± 100
nA
V
DS
= 0 V, V
GS
= ± 8 V
P-Ch ± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
N-Ch 1
µA
V
DS
= - 16 V, V
GS
= 0 V
P-Ch - 1
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 °C
N-Ch 10
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 85 °C
P-Ch - 10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 4.5 V
N-Ch 5
A
V
DS
≤ - 5 V, V
GS
= - 4.5 V
P-Ch - 5
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 3 A
N-Ch 0.064 0.080
Ω
V
GS
= - 4.5 V, I
D
= - 2.2 A
P-Ch 0.115 0.145
V
GS
= 2.5 V, I
D
= 2.6 A
N-Ch 0.080 0.100
V
GS
= - 2.5 V, I
D
= - 1.8 A
P-Ch 0.163 0.200
V
GS
= 1.8 V, I
D
= 2.3 A
N-Ch 0.104 0.128
V
GS
= - 1.8 V, I
D
= - 1.0 A
P-Ch 0.240 0.300
Forward Transconductance
a
g
fs
V
DS
= 5 V, I
D
= 3 A
N-Ch 9
S
V
DS
= - 5 V, I
D
= - 2.2 A
P-Ch 5
Diode Forward Voltage
a
V
SD
I
S
= 1.05 A, V
GS
= 0 V
N-Ch 0.8 1.1
V
I
S
= - 1.05 A, V
GS
= 0 V
P-Ch - 0.8 - 1.1
Dynamic
b
Total Gate Charge
Q
g
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3 A
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 2.2 A
N-Ch 5 7.5
nC
P-Ch 5 7.5
Gate-Source Charge
Q
gs
N-Ch 0.65
P-Ch 1.0
Gate-Drain Charge
Q
gd
N-Ch 0.9
P-Ch 0.9
Tur n - O n D e l ay Time
t
d(on)
N-Channel
V
DD
= 10 V, R
L
= 10 Ω
I
D
≅ 0.5 A, V
GEN
= 4.5 V, R
g
= 6 Ω
P-Channel
V
DD
= - 4 V, R
L
= 8 Ω
I
D
≅ - 1 A, V
GEN
= - 4.5 V, R
g
= 6 Ω
N-Ch 12 20
ns
P-Ch 12 20
Rise Time
t
r
N-Ch 30 50
P-Ch 29 50
Turn-Off Delay Time
t
d(off)
N-Ch 28 50
P-Ch 24 45
Fall Time
t
f
N-Ch 12 20
P-Ch 30 50
Source-Drain
Reverse Recovery Time
t
rr
I
F
= 1.05 A, dI/dt = 100 A/µs
N-Ch 20 40
I
F
= - 1.05 A, dI/dt = 100 A/µs
P-Ch 20 40
Document Number: 71332
S09-2275-Rev. B, 02-Nov-09
www.vishay.com
3
Vishay Siliconix
Si3588DV
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
2
4
6
8
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 4.5 V thru 2 V
1.5 V
- On-Resistance (Ω)
0.0
0.1
0.2
0.3
0.4
0.5
0246810
R
DS(on)
I
D
- Drain Current (A)
V
GS
= 1.8 V
V
GS
= 4.5 V
V
GS
= 2.5 V
0
1
2
3
4
5
012345
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 10 V
I
D
= 3.0 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
25 °C
T
C
= - 55 °C
125 °C
0
100
200
300
400
500
600
048121620
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
V
GS
= 4.5 V
I
D
= 3.0 A
P1-P3P4-P6P7-P8

SI3588DV-T1-GE3

Mfr. #:
Buy SI3588DV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
Lifecycle:
New from this manufacturer.
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