www.vishay.com Document Number: 91174
2 S09-0518-Rev. B, 13-Apr-09
IRFIB5N65A, SiHFIB5N65A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
d. t = 60 s, f = 60 Hz.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-65
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-2.1
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 650 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA
d
- 670 - mV/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 650 V, V
GS
= 0 V - - 25
µA
V
DS
= 520 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 3.1 A
b
- - 0.93 Ω
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 3.1 A 3.9 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 1417 -
pF
Output Capacitance C
oss
- 177 -
Reverse Transfer Capacitance C
rss
-7.0-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 1912 -
V
DS
= 520 V, f = 1.0 MHz - 48 -
Effective Output Capacitance C
oss
eff. V
DS
= 0 V to 520 V
c
-84-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 5.2 A, V
DS
= 400 V
see fig. 6 and 13
b
--48
nC Gate-Source Charge Q
gs
--12
Gate-Drain Charge Q
gd
--19
Turn-On Delay Time t
d(on)
V
DD
= 325 V, I
D
= 5.2 A
R
G
= 9.1 Ω, R
D
= 62 Ω,
see fig. 10
b
-14-
ns
Rise Time t
r
-20-
Turn-Off Delay Time t
d(off)
-34-
Fall Time t
f
-18-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--5.2
A
Pulsed Diode Forward Current
a
I
SM
--21
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 5.2 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 5.2 A, dI/dt = 100 A/µs
b
- 493 739 ns
Body Diode Reverse Recovery Charge Q
rr
-2.13.2µC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
