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IRFIB5N65APBF

P1-P3P4-P6P7-P8
www.vishay.com Document Number: 91174
4 S09-0518-Rev. B, 13-Apr-09
IRFIB5N65A, SiHFIB5N65A
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
0
400
800
1200
1600
2000
1 10 100 1000
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
iss
oss
rss
0 10 20 30 40 50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
5.2A
V = 130V
DS
V = 325V
DS
V = 520V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Document Number: 91174 www.vishay.com
S09-0518-Rev. B, 13-Apr-09 5
IRFIB5N65A, SiHFIB5N65A
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
V
DS
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (s)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
A
R
G
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
Driver
A
15 V
20 V
t
p
V
DS
I
AS
www.vishay.com Document Number: 91174
6 S09-0518-Rev. B, 13-Apr-09
IRFIB5N65A, SiHFIB5N65A
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Typical Drain-to Source Voltage vs. Avalanche
Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
25 50 75 100 125 150
0
200
400
600
800
Starting T , Junction Temperature ( C)
E , Single Pulse Av alanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
2.3A
3.3A
5.2A
700
720
740
760
780
800
0123456
A
DSav
av
I , Avalanche Current (A)
V , Avalanche Voltage (V)
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P1-P3P4-P6P7-P8

IRFIB5N65APBF

Mfr. #:
Buy IRFIB5N65APBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 650V HEXFET MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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