85222AM-02LF

1-TO-2, LVCMOS/LVTTL-TODIFFERENTIAL
HSTL TRANSLATOR
85222-02 DATA SHEET
4 REVISION B 6/15/15
PARAMETER MEASUREMENT INFORMATION
PART-TO-PART SKEW
PROPAGATION DELAY
3.3V CORE/3.3V OUTPUT LOAD AC TEST CIRCUIT
OUTPUT DUTY CYCLE/PULSE WIDTH/PERIOD
OUTPUT RISE/FALL TIME
OUTPUT SKEW
NOTE: All outputs must be terminated with 50Ω to ground.
REVISION B 6/15/15
85222-02 DATA SHEET
5 1-TO-2, LVCMOS/LVTTL-TODIFFERENTIAL
HSTL TRANSLATOR
OUTPUTS:
HSTL OUTPUT
All outputs must be terminated with 50Ω to ground.
RECOMMENDATIONS FOR UNUSED OUTPUT PINS
APPLICATION INFORMATION
SCHEMATIC EXAMPLE
Figure 2 shows a schematic example of 85222-02. In the example,
the input is driven by a 7 ohm LVCMOS driver with a series
termination. The decoupling capacitor should be physically located
Zo = 50 Ohm
R3
50
R4
50
R2
50
VDD=3.3V
C1
0.1u
Zo = 50 Ohm
R6 43
Zo = 50 Ohm
Zo = 50 Ohm
R1
50
HSTL Input
+
-
Ro ~ 7 Ohm
Q2
Driv er_LVCMOS
Zo = 50 Ohm
U1
ICS85222-02
1
2
3
4
8
7
6
5
Q0
nQ0
Q1
nQ1
VDD
CLK
nc
GND
HSTL Input
+
-
VDD=3.3V
FIGURE 2. 85222-02 HSTL BUFFER SCHEMATIC EXAMPLE
near the power pin. For 85222-02, the unused output need to be
terminated.
1-TO-2, LVCMOS/LVTTL-TODIFFERENTIAL
HSTL TRANSLATOR
85222-02 DATA SHEET
6 REVISION B 6/15/15
POWER CONSIDERATIONS
This section provides information on power dissipation and junction temperature for the 85222-02.
Equations and example calculations are also provided.
1. Power Dissipation.
The total power dissipation for the 85222-02 is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for V
DD
= 3.3V + 5% = 3.465V, which gives worst case results.
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
Power (core)
MAX
= V
DD_MAX
* I
DD_MAX
= 3.465V * 50mA = 173.25mW
Power (outputs)
MAX
= 73.8mW/Loaded Output pair
If all outputs are loaded, the total power is 2 * 82.3mW = 164.6mW
Total Power
_MAX
(3.465V, with all outputs switching) = 173.25mW + 164.6mW = 337.86mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the
device. The maximum recommended junction temperature for HiPerClockS
TM
devices is 125°C.
The equation for Tj is as follows: Tj = θJA * Pd_total + TA
Tj = Junction Temperature
θ
JA = Junction-to-Ambient Thermal Resistance
Pd_total = Total device power dissipation (example calculation is in Section 1 above)
T
A
= Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance θ
JA
must be used. Assuming a
moderate air fl ow of 200 linear feet per minute and a multi-layer board, the appropriate value is 103.3°C/W per Table 5 below.
Therefore, Tj for an ambient temperature of 70°C with all outputs switching is:
70°C + 0.337W * 103.3°C/W = 104.8°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air fl ow,
and the type of board (single layer or multi-layer).
θ
JA
by Velocity (Linear Feet per Minute)
0 200 500
Single-Layer PCB, JEDEC Standard Test Boards 153.3°C/W 128.5°C/W 115.5°C/W
Multi-Layer PCB, JEDEC Standard Test Boards 112.7°C/W 103.3°C/W 97.1°C/W
NOTE: Most modern PCB designs use multi-layered boards. The data in the second row pertains to most designs.
TABLE 5. THERMAL RESISTANCE θ
JA
FOR 8-PIN SOIC, FORCED CONVECTION

85222AM-02LF

Mfr. #:
Manufacturer:
IDT
Description:
Translation - Voltage Levels 2 HSTL OUT BUFFER
Lifecycle:
New from this manufacturer.
Delivery:
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