SIHG70N60AEF-GE3 Datasheet SIHG70N60AEF-GE3 | P1-P3

SiHG70N60AEF

www.vishay.com

Vishay Siliconix

S17-1315-Rev. A, 21-Aug-17

1

Document Number: 91997

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

EF Series Power MOSFET With Fast Body Diode

FEATURES

• Fast body diode MOSFET using E series

technology

• Reduced t

rr

, Q

rr

, and I

RRM

• Low figure-of-merit (FOM) R

on

x Q

g

• Low switching losses due to reduced Q

rr

• Ultra low gate charge (Q

g

)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Lighting

- High-intensity lighting (HID)

- Light emitting diodes (LEDs)

• Consumer and computing

- ATX power supplies

• Industrial

- Welding

- Battery chargers

• Renewable energy

- Solar (PV inverters)

• Switching mode power supplies (SMPS)

• Applications using the following topologies

- LLC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V

DD

= 140 V, starting T

J

= 25 °C, L = 28.2 mH, R

g

= 25 , I

AS

= 8.5 A

c. 1.6 mm from case

d. I

SD

= 35 A, di/dt = 300 A/μs, V

DS

= 400 V

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 650

R

DS(on)

typ. () at 25 °C V

GS

= 10 V 0.0355

Q

g

max. (nC) 410

Q

gs

(nC) 38

Q

gd

(nC) 99

Configuration Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free and halogen-free SiHG70N60AEF-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

600

V Gate-source voltage

V

GS

± 20

Gate-source voltage AC (f > 1 Hz) 30

Continuous drain current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

60

AT

C

= 100 °C 38

Pulsed drain current

a

I

DM

173

Linear derating factor 3.3 W/°C

Single pulse avalanche energy

b

E

AS

1019 mJ

Maximum power dissipation P

D

417 W

Operating junction and storage temperature range T

J

, T

stg

-55 to +150 °C

Drain-source voltage slope T

J

= 125 °C

dv/dt

70

V/ns

Reverse diode dv/dt

d

50

Soldering recommendations (peak temperature)

c

For 10 s 300 °C

SiHG70N60AEF

www.vishay.com

Vishay Siliconix

S17-1315-Rev. A, 21-Aug-17

2

Document Number: 91997

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. C

oss(er)

is a fixed capacitance that gives the same energy as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

b. C

oss(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum junction-to-ambient R

thJA

-40

°C/W

Maximum junction-to-case (drain) R

thJC

-0.3

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 600 - - V

V

DS

temperature coefficient V

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.62 - V/°C

Gate-source threshold voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2 - 4 V

Gate-source leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

Zero gate voltage drain current I

DSS

V

DS

= 480 V, V

GS

= 0 V - - 1 μA

V

DS

= 480 V, V

GS

= 0 V, T

J

= 125 °C - - 2 mA

Drain-source on-state resistance R

DS(on)

V

GS

= 10 V I

D

= 35 A - 0.0355 0.041 

Forward transconductance

a

g

fs

V

DS

= 30 V, I

D

= 35 A - 23 - S

Dynamic

Input capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 5348 -

pF

Output capacitance C

oss

- 238 -

Reverse transfer capacitance C

rss

-7-

Effective output capacitance, energy

C

o(er)

V

DS

= 0 V to 480 V, V

GS

= 0 V

- 159 -

Effective output capacitance, time 

C

o(tr)

- 810 -

Total gate charge Q

g

V

GS

= 10 V I

D

= 35 A, V

DS

= 480 V

- 205 410

nC Gate-source charge Q

gs

-38-

Gate-drain charge Q

gd

-99-

Turn-on delay time t

d(on)

V

DD

= 480 V, I

D

= 35 A,

V

GS

= 10 V, R

g

= 9.1 

-4590

ns

Rise time t

r

- 104 208

Turn-off delay time t

d(off)

- 219 438

Fall time t

f

- 113 226

Gate input resistance R

g

f = 1 MHz, open drain 0.5 1.0 2.0 

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

MOSFET symbol

showing the 

integral reverse

p - n junction diode

--60

A

Pulsed diode forward current I

SM

--173

Diode forward voltage V

SD

T

J

= 25 °C, I

S

= 35 A, V

GS

= 0 V - 0.9 1.2 V

Reverse recovery time t

rr

T

J

= 25 °C, I

F

= I

S

= 35 A,

di/dt = 100 A/μs, V

R

= 400 V

- 184 368 ns

Reverse recovery charge Q

rr

-1.63.2μC

Reverse recovery current I

RRM

-16-A

S

D

G

SiHG70N60AEF

www.vishay.com

Vishay Siliconix

S17-1315-Rev. A, 21-Aug-17

3

Document Number: 91997

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - C

oss

and E

oss

vs. V

DS

0

50

100

150

200

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 25 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

50

100

150

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 150 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

50

100

150

200

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

GS

, Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

V

DS

= 19.8 V

0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

R

DS(on)

, Drain-to-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

I

D

= 35 A

V

GS

= 10 V

0.1

1

10

100

1000

10 000

100 000

0 100 200 300 400 500 600

C, Capacitance (pF)

V

DS

, Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0

5

10

15

20

25

30

35

50

500

5000

0 100 200 300 400 500 600

E

oss

(μJ)

C

oss

(pF)

V

DS

C

oss

E

oss

SIHG70N60AEF-GE3

SIHG70N60AEF-GE3

Products related to this Datasheet