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SIHG70N60AEF-GE3

SIHG70N60AEF-GE3
Mfr. #:
SIHG70N60AEF-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 20V Vgs TO-247AC
Lifecycle:
New from this manufacturer.
Datasheet:
SIHG70N60AEF-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG70N60AEF-GE3 DatasheetSIHG70N60AEF-GE3 Datasheet (P4-P6)SIHG70N60AEF-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIHG70N60AEF-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247AC-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
35.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
410 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
417 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
EF
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
23 S
Fall Time:
113 ns
Product Type:
MOSFET
Rise Time:
104 ns
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
219 ns
Typical Turn-On Delay Time:
45 ns
Tags
SIHG70, SIHG7, SIHG, SIH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
EF Series Power MOSFET N-Channel with Fast Body Diode 600V VDS ±20V VGS 60A ID 3-Pin TO-247AC
***i-Key
MOSFET N-CH 600V 60A TO247AC
***ark
Mosfet, N-Ch, 600V, 60A, To-247Ac; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.0355Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 60A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0355ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:417W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:EF Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
MOSFET, CA-N, 600V, 60A, TO-247AC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.0355ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:417W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EF Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Part # Mfg. Description Stock Price
SIHG70N60AEF-GE3
DISTI # SIHG70N60AEF-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 60A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		500In Stock
  • 500:$7.6962
  • 100:$8.6516
  • 25:$9.8192
  • 10:$10.2440
  • 1:$11.1500
SIHG70N60AEF-GE3
DISTI # SIHG70N60AEF-GE3		Vishay IntertechnologiesEF Series Power MOSFET N-Channel with Fast Body Diode 600V VDS ±20V VGS 60A ID 3-Pin TO-247AC - Tape and Reel (Alt: SIHG70N60AEF-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$6.3900
  • 3000:$6.5900
  • 2000:$6.7900
  • 1000:$7.0900
  • 500:$7.2900
SIHG70N60AEF-GE3
DISTI # 43AC0286		Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.0355ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes1000
  • 500:$7.4000
  • 250:$7.9200
  • 100:$8.6900
  • 50:$8.9400
  • 25:$9.4500
  • 10:$10.2100
  • 1:$11.2400
SIHG70N60AEF-GE3
DISTI # 78-SIHG70N60AEF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 20V Vgs TO-247AC
RoHS: Compliant		451
  • 1:$11.1300
  • 10:$10.1100
  • 25:$9.3600
  • 50:$8.8500
  • 100:$8.6000
  • 250:$7.8400
  • 500:$7.3300
  • 1000:$6.7300
SIHG70N60AEF-GE3
DISTI # 2802793		Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, TO-247AC
RoHS: Compliant		992
  • 250:$11.7200
  • 100:$12.4000
  • 50:$13.1500
  • 10:$14.3200
  • 5:$16.5200
  • 1:$18.9500
SIHG70N60AEF-GE3
DISTI # 2802793		Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, TO-247AC992
  • 100:£6.2300
  • 50:£6.4100
  • 10:£6.7800
  • 5:£7.4300
  • 1:£8.0700
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Availability
Stock:
451
On Order:
2434
Enter Quantity:
Current price of SIHG70N60AEF-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$11.13
$11.13
10
$10.11
$101.10
25
$9.36
$234.00
50
$8.85
$442.50
100
$8.60
$860.00
250
$7.84
$1 960.00
500
$7.33
$3 665.00
1000
$6.73
$6 730.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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