PartNumber | SIHG70N60AEF-GE3 | SIHG73N60AE-GE3 | SIHG70N60EF-GE3 |
Description | MOSFET 600V Vds 20V Vgs TO-247AC | MOSFET 600V Vds 30V Vgs TO-247AC | MOSFET RECOMMENDED ALT 78-SIHW70N60EF-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
Id Continuous Drain Current | 60 A | 60 A | - |
Rds On Drain Source Resistance | 35.5 mOhms | 35 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 4 V | - |
Vgs Gate Source Voltage | 20 V | 30 V | - |
Qg Gate Charge | 410 nC | 394 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 417 W | 417 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | - | Tube |
Series | EF | E | EF |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 23 S | 22 S | - |
Fall Time | 113 ns | 114 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 104 ns | 96 ns | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 219 ns | 212 ns | - |
Typical Turn On Delay Time | 45 ns | 43 ns | - |
Height | - | - | 20.82 mm |
Length | - | - | 15.87 mm |
Width | - | - | 5.31 mm |
Factory Pack Quantity | - | - | 500 |