NCP1395A/B
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS (For typical values T
j
= 25°C, for min/max values T
j
= −40°C to +125°C, Max T
J
= 150°C,
V
CC
= 11 V, unless otherwise noted.)
Characteristic
Pin Symbol Min Typ Max Unit
SUPPLY SECTION
Turn−On Threshold Level, V
CC
Going Up – A Version 12 VCC
ON
12.3 13.3 14.3 V
Turn−On Threshold Level, V
CC
Going Up – B Version 12 VCC
ON
9.3 10.3 11.3 V
Minimum Operating Voltage after Turn−On 12 VCC
(min)
8.3 9.3 10.3 V
Minimum Hysteresis between VCC
ON
and VCC
(min)
− A Version 12 VhysteA − 3.0 − V
Minimum Hysteresis between VCC
ON
and VCC
(min)
− B Version 12 VhysteB − 1.0 − V
Startup Current, V
CC
< VCC
ON
12 Istartup − − 300 mA
V
CC
Level at which the Internal Logic gets Reset 12 VCC
reset
− 5.9 − V
Internal IC Consumption, No Output Load on Pins 11/12, Fsw = 300 kHz 12 ICC1 − 1.6 − mA
Internal IC consumption, 100 pF output load on pin 11 / 12, Fsw = 300 kHz 12 ICC2 − 2.3 − mA
Consumption in fault mode (All drivers disabled, Vcc > VCC
(min)
) 12 ICC3 − 1.3 − mA
VOLTAGE CONTROL OSCILLATOR (VCO)
Minimum Switching Frequency, Rt = 120 kW on Pin 1, Vpin 5 = 0 V,
DT = 300 ns
1 Fsw min 48.5 50 51.5 kHz
Maximum Switching Frequency, Rfmax = 22 kW on Pin 2, Vpin 5 >
6.0 V, DT = 300 ns − T
j
= 25°C (Note 3)
2 Fsw max 0.9 1.0 1.11 MHz
Feedback Pin Swing above which Df = 0 5 FBSW − 6.0 − V
VCO V
CC
Rejection, DV
CC
= 1.0 V, in Percentage of Fsw − PSRR − 0.2 − %/V
Operating Duty Cycle 11−10 DC 48 50 52 %
Reference Voltage for all Current Generations (Fosc, DT) 1, 3 VREF 1.86 2.0 2.14 V
Delay before any Driver Restart in Fault Mode − Tdel − 20 − ms
FEEDBACK SECTION
Internal Pulldown Resistor 5 Rfb − 20 − kW
OTA Internal Offset Voltage 16 VREF_FB 2.325 2.5 2.675 V
Voltage on Pin 5 below which the FB Level has no VCO Action 5 Vfb_off − 1.3 − V
Voltage on Pin 5 below which the Controller Considers a Fault 5 Vfb_fault − 0.6 − V
Input Bias Current 16 IBias − − 100 nA
DC Transconductance Gain 15 OTAG − 250 − mS
Gain Product Bandwidth, Rload = 5.0 kW 15 GBW − 1.0 − MHz
DRIVE OUTPUT
Output Voltage Rise Time @ CL = 100 pF, 10−90% of Output Signal 11−10 T
r
− 20 − ns
Output Voltage Fall−Time @ CL = 100 pF, 10−90% of Output Signal 11−10 T
f
− 20 − ns
Source Resistance 11−10 R
OH
20 60 120 W
Sink Resistance 11−10 R
OL
30 60 130 W
Deadtime with R
DT
= 127 kW from Pin 3 to GND 3 T_dead 270 300 390 ns
Maximum Deadtime with R
DT
= 540 kW from Pin 3 to GND 3 T_dead−max − 1.0 − ms
Minimum Deadtime, R
DT
= 30 kW from Pin 3 to GND 3 T_dead−min − 150 − ns
3. Room temperature only, please look at characterization data for evolution versus junction temperature.
