FDW252P

July 2008
2008 Fairchild Semiconductor Corporation
FDW252P Rev. C1(W)
FDW252P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
–8.8 A, –20 V. R
DS(ON)
= 0.0125 @ V
GS
= –4.5 V
R
DS(ON)
= 0.018 @ V
GS
= –2.5 V
Extended V
GSS
range (±12V) for battery
applications
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
S
S
G
D
S
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
± 12
V
I
D
Drain Current – Continuous (Note 1) –8.8 A
– Pulsed –50
P
D
Power Dissipation (Note 1a) 1.3 W
(Note 1b)
0.6
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 96
°C/W
(Note 1b)
208
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
252P FDW252P 13’’ 16mm 2500 units
FDW252P
FDW252P Rev. C1(W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 µA
–20 V
BVDSS
===T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 µA, Referenced to 25°C
–12
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –16 V, V
GS
= 0 V –1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= –12 V, V
DS
= 0 V –100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= 12 V, V
DS
= 0 V 100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 µA
–0.6 –0.8 –1.5 V
VGS(th)
===T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to 25°C
3.5
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –4.5 V, I
D
= –8.8 A
V
GS
= –2.5 V, I
D
= –7.2 A
V
GS
= –4.5 V, I
D
= –8.8 A, T
J
= 125°C
10
14
13
12.5
18
19
m
I
D(on)
On–State Drain Current V
GS
= –4.5 V, V
DS
= –5 V –50 A
g
FS
Forward Transconductance V
DS
= –10 V, I
D
= –8.8 A 46 S
Dynamic Characteristics
C
iss
Input Capacitance 5045 pF
C
oss
Output Capacitance 1035 pF
C
rss
Reverse Transfer Capacitance
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
549 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 8 16 ns
t
r
Turn–On Rise Time 14 25 ns
t
d(off)
Turn–Off Delay Time 130 208 ns
t
f
Turn–Off Fall Time
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
80 128 ns
Q
g
Total Gate Charge 41 66 nC
Q
gs
Gate–Source Charge 7 nC
Q
gd
Gate–Drain Charge
V
DS
= –10 V, I
D
= –8.8 A,
V
GS
= –4.5 V
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –1.2 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.2 A (Note 2) –0.6 –1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW252P
FDW252P Rev. C1(W)
Typical Characteristics
0
5
10
15
20
25
30
00.511.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -4.5V
-2.5V
-2.0V
-1.5V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
2
0 6 12 18 24 30
-I
D
, DIRAIN CURRENT (A)
V
GS
= -2.0V
-3.0V
-3.5V
-4.0V
-4.5V
-2.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= -8.8A
V
GS
= -4.5V
0.005
0.01
0.015
0.02
0.025
0.03
0.035
1.522.533.544.55
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -4.4A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
0.5 1 1.5 2 2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW252P

FDW252P

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET TSSOP-8 P-CH 2.5V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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