FDW252P

FDW252P Rev. C1(W)
Typical Characteristics
0
1
2
3
4
5
0 1020304050
Q
g
, GATE CHARGE (nC)
I
D
= -8.8A V
DS
= -5V
-10V
-15V
0
1000
2000
3000
4000
5000
6000
7000
8000
036912
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 208
o
C/W
T
A
= 25
o
C
10ms
0
10
20
30
40
50
0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
SINGLE PULSE
R
θ
JA
= 208°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
Rθ
JA
(t) = r(t) + Rθ
JA
Rθ
JA
= 208 °C/W
T
J
- T
A
= P * Rθ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW252P
Rev. I35
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FDW252P

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET TSSOP-8 P-CH 2.5V
Lifecycle:
New from this manufacturer.
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