6.42
3
IDT71T016SA, 2.5V CMOS Static RAM
1 Meg (64K x 16-Bit) Commercial and Industrial Temperature Ranges
Parameter
71T016SA10 71T016SA12 71T016SA15 71T016SA20
Symbol Com'l Com'l Ind Com'l Ind Com'l Ind Unit
I
CC
Dynamic Operating Current
CS < V
LC
,
Outputs Open, V
DD
= Max., f = f
MAX
(3)
Max. 160 150 160 130 130 120 120
mA
Typ.
(4)
90 85
____
80
____
80
____
I
SB
Dynamic Standby Power Supply Current
CS > V
HC
,
Outputs Open, V
DD
= Max., f = f
MAX
(3)
45 40 45 35 35 30 30 mA
I
SB
1
Full Standby Power Supply Current (static)
CS > V
HC
,
Outputs Open, V
DD
= Max., f = 0
(3)
10 15 15 15 15 15 15 mA
5326 tbl 8
Absolute Maximum Ratings
(1)
Recommended Operating
Temperature and Supply Voltage
DC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
Capacitance
(TA = +25°C, f = 1.0MHz)
Recommended DC Operating
Conditions
DC Electrical Characteristics
(1,2)
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).
3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .
4. Typical values are measured at 2.5V, 25°C and with equal read and write cycles. This parameter is guaranteed by device characterization but is not production
tested.
Symbol Rating Value Unit
V
DD
Supply Voltage Relative
to V
SS
–0.3 to +3.6 V
V
IN
, V
OUT
Terminal Voltage Relative
to V
SS
–0.3 to V
DD
+0.3 V
T
BIAS
Temperature Under Bias –55 to +125
o
C
T
STG
Storage Temperature –55 to +125
o
C
P
T
Power Dissipation 1.25 W
I
OUT
DC Output Current 50 mA
5326 tbl 03
Grade Temperature V
SS
V
DD
Commercial 0°C to +70°C 0V See Below
Industrial -40°C to +85°C 0V See Below
5326 tbl 04
Symbol Parameter Min. Typ. Max. Unit
V
DD
Supply Voltage 2.375 2.5 2.625 V
Vss Ground 0 0 0 V
V
IH
Input High Voltage 1.7
____
V
DD
+0.3
(1)
V
V
IL
Input Low Voltage –0.3
(2) ____
0.7 V
5326 tbl 05
Symbol Parameter
(1)
Conditions Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 6 pF
C
I/O
I/O Capacitance V
OUT
= 3dV 7 pF
5326 tbl 06
Symbol Parameter Test Condition
IDT71T016SA
UnitMin. Max.
|I
LI
| Input Leakage Current V
DD
= Max., V
IN
= V
SS
to V
DD
___
5µA
|I
LO
| Output Leakage Current V
DD
= Max., CS = V
IH
, V
OUT
= V
SS
to V
DD
___
5µA
V
OL
Output Low Voltage I
OL
= 2.0mA, V
DD
= Min.
___
0.7 V
V
OH
Output High Voltage I
OH
= 2.0mA, V
DD
= Min. 1.7
___
V
5326 tbl 07
NOTES:
1. VIH (max) = VDD + 1.0V a.c. (pulse width less than tCYC/2) for I < 20 mA, once
per cycle.
2. VIL (min) = -1.0V a.c. (pulse width less than tCYC/2) for I < 20 mA, once per cycle.
