PHK04P02T,518 Datasheet PHK04P02T,518 | P1-P3

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

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use http://www.nexperia.com

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salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

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reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and

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Team Nexperia

1. Product profile

1.1 General description

Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using vertical D-MOS technology. This product is designed and qualified for use

in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

 Suitable for high frequency

applications due to fast switching

characteristics

 Suitable for logic level gate drive

sources

 Suitable for very low gate drive

sources voltage

1.3 Applications

 Battery powered applications  High-speed digital interfaces

1.4 Quick reference data

PHK04P02T

P-channel vertical D-MOS logic level FET

Rev. 02 — 14 December 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 150°C ---16V

drain current T

=25°C ---4.6

tot

total power

dissipation

--5W

Static characteristics

DSon

drain-source on-state

resistance

=-2.5V; I

=-1A; T

=25°C - 117 150 mΩ

=-4.5V; I

=-1A; T

= 25 °C - 80 120 mΩ

Dynamic characteristics

gate-drain charge V

=-4.5V; I

=-1A;

=-10V; T

=25°C

-1.83-nC

Product data sheet Rev. 02 — 14 December 2010 2 of 12

NXP Semiconductors

PHK04P02T

P-channel vertical D-MOS logic level FET

2. Pinning information

3. Ordering information

4. Limiting values

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1Ssource

SOT96-1 (SO8)

2Ssource

3Ssource

4 G gate

5 D drain

6 D drain

7 D drain

8 D drain

001aaa02

Table 3. Ordering information

Type number Package

Name Description Version

PHK04P02T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

drain-source voltage T

≥ 25 °C; T

≤ 150 °C - -16 V

DGR

drain-gate voltage R

=20kΩ --16V

gate-source voltage -8 8 V

drain current T

= 100 °C - -1.87 A

=25°C - -4.66 A

peak drain current T

= 25 °C; pulsed - -26.4 A

tot

total power dissipation T

=25°C - 5 W

= 100 °C - 2 W

stg

storage temperature -55 150 °C

junction temperature -55 150 °C

Source-drain diode

source current T

=25°C - -4.66 A

peak source current T

= 25 °C; pulsed; t

≤ 5s - -26 A

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

PHK04P02T,518

Mfr. #:

Buy PHK04P02T,518

Manufacturer:

Nexperia

Description:

MOSFET P-CH 16V 4.66A 8-SOIC

Lifecycle:

New from this manufacturer.

Delivery:

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PHK04P02T,518