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IXTP76P10T

P1-P3P4-P6P7-P7
© 2017 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C - 100 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M - 100 V
V
GSS
Continuous 15 V
V
GSM
Transient 25 V
I
D25
T
C
= 25C - 76 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
- 230 A
I
A
T
C
= 25C - 38 A
E
AS
T
C
= 25C1J
P
D
T
C
= 25C 298 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque (TO-220 & TO-247) 1.13 /10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-268HV 4.0 g
TO-247 6.0 g
DS100024C(9/15)
TrenchP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTT76P10THV
IXTA76P10T
IXTP76P10T
IXTH76P10T
V
DSS
= - 100V
I
D25
= - 76A
R
DS(on)
25m
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Easy to Mount
Space Savings
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
D
S
G
G = Gate D = Drain
S = Source Tab = Drain
TO-268HV
(IXTT)
G
D (Tab)
S
TO-263 AA
(IXTA)
G
S
D (Tab)
G
D
S
TO-220AB
(IXTP)
D (Tab)
TO-247
(IXTH)
G
S
D
D (Tab)
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= - 250A -100 V
V
GS(th)
V
DS
= V
GS
, I
D
= - 250A - 2.0 - 4.0 V
I
GSS
V
GS
= 15V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V - 15 A
T
J
= 125C - 750A
R
DS(on)
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1 25 m
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1 35 58 S
C
iss
13.7 nF
C
oss
V
GS
= 0V, V
DS
= - 25V, f = 1MHz 890 pF
C
rss
275 pF
t
d(on)
25 ns
t
r
40 ns
t
d(off)
52 ns
t
f
20 ns
Q
g(on)
197 nC
Q
gs
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
65 nC
Q
gd
65 nC
R
thJC
0.42C/W
R
thCS
TO-220 0.50 C/W
TO-247 0.21 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V - 76 A
I
SM
Repetitive, Pulse Width Limited by T
JM
- 304 A
V
SD
I
F
= - 38A, V
GS
= 0V, Note 1 -1.3 V
t
rr
70 ns
Q
RM
215 nC
I
RM
- 6 A
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1 (External)
I
F
= - 38A, -di/dt = -100A/s
V
R
= - 50V, V
GS
= 0V
© 2017 IXYS CORPORATION, All Rights Reserved
IXTT76P10THV IXTA76P10T
IXTP76P10T IXTH76P10T
Fig. 1. Output Characteristics @ T
J
= 25
o
C
-80
-70
-60
-50
-40
-30
-20
-10
0
-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 5V
- 6V
- 7V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
-280
-240
-200
-160
-120
-80
-40
0
-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 5V
- 6V
- 7V
- 8V
- 9V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
-80
-70
-60
-50
-40
-30
-20
-10
0
-3.2-2.8-2.4-2-1.6-1.2-0.8-0.40
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 7V
- 6V
- 5V
Fig. 4. R
DS(on)
Normalized to I
D
= - 38A Value vs.
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 76A
I
D
= - 38A
Fig. 5. R
DS(on)
Normalized to I
D
= - 38A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-240-200-160-120-80-400
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 6. Maximum Drain Current vs. Case Temperature
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P6P7-P7

IXTP76P10T

Mfr. #:
Buy IXTP76P10T
Manufacturer:
Littelfuse
Description:
MOSFET -76 Amps -100V 0.024 Rds
Lifecycle:
New from this manufacturer.
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