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TN1605H-6G-TR

P1-P3P4-P6P7-P9P10-P10
June 2017
DocID030162 Rev 2
1/10
This is information on a product in full production.
www.st.com
TN1605H-6G
High temperature 16 A SCRs
Datasheet - production data
Features
High junction temperature: T
j
= 150 °C
Gate triggering current I
GT
= 6 mA
High noise immunity dV/dt = 200 V/μs up to
150 °C
Blocking voltage V
DRM
/V
RRM
= 600 V
High turn-on current rise dI/dt: 100 A/μs
ECOPACK
®
2 compliant component
Applications
Motorbikes voltage regulator circuits
Inrush current limiting circuits
Motor control circuits and starters
Light dimmers
Solid state relays
Description
Designed with high immunity switching to
external surges, this device offers robust
switching up to its 150°C maximum T
j
.
The combination of noise immunity and low gate
triggering current allows to design strong and
compact control circuit.
Table 1: Device summary
Order code
V
DRM
/V
RRM
I
GT
TN1605H-6G
D²PAK
600
6 mA
A
K
A
D²PAK
A
K
G
G
Characteristics
TN1605H-6G
2/10
DocID030162 Rev 2
1 Characteristics
Table 2: Absolute maximum ratings (limiting values, T
j
= 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180 ° conduction angle)
T
c
= 133 °C
16
A
IT
(AV)
Average on-state current
(180° conduction angle)
T
c
= 133 °C
10
A
T
c
= 138 °C
8
T
c
= 142 °C
6
I
TSM
Non repetitive surge peak
on-state current
t
p
= 8.3 ms
T
j
initial = 25 °C
153
A
t
p
= 10 ms
140
I
2
t
I
2
t value for fusing
t
p
= 10 ms
98
A
2
s
dl/dt
Critical rate of rise of on-state
current
I
G
= 2 x I
GT
,
tr ≤ 100 ns,
f = 60 Hz
100
A/µs
V
DRM
/V
RRM
Repetitive peak off-state voltage
T
j
= 150 °C
600
V
V
DSM
/V
RSM
Non repetitive surge peak off-
state voltage
t
p
= 10 ms
700
V
P
G
(AV)
Average gate power dissipation
T
j
= 150 °C
1
W
V
RGM
Maximum peak reverse gate voltage
5
V
I
GM
Peak gate current
t
p
= 20 µs
T
j
= 150 °C
4
A
T
stg
Storage junction temperature range
-40 to +150
°C
T
j
Operating junction temperature range
-40 to +150
°C
Table 3: Dynamic characteristics
Symbol
Parameter
T
j
Value
Unit
I
GT
V
D
= 12 V, R
L
= 33 Ω
25 °C
Min.
3.5
mA
Typ.
4.5
Max.
6
V
GT
Max.
1.3
V
V
GD
V
D
= 600, R
L
= 3.3 kΩ
150 °C
Min.
0.15
V
I
L
I
G
= 1.2 x I
GT
25 °C
Max.
40
mA
I
H
I
T
= 500 mA, gate open
Max.
20
dV/dt
V
D
= 402 V, gate open
150 °C
Min.
200
V/µs
t
gt
I
TM
= 32 A, V
D
= 402 V, I
G
= 12 mA, (dI
G
/dt)
max = 0.2 A/µs
25 °C
Typ.
1.9
µs
t
q
I
TM
= 32 A, V
D
= 402 V, (dl/dt)
off
= 30 A/µs,
V
R
= 25 V, dV
D
/dt = 20 V/µs
150 °C
Typ.
70
µs
TN1605H-6G
Characteristics
DocID030162 Rev 2
3/10
Table 4: Static electrical characteristics
Symbol
Test conditions
T
j
Value
Unit
V
TM
I
TM
= 32 A, t
p
= 380 µs
25 °C
Max.
1.6
V
V
TO
Threshold on-state voltage
150 °C
Max.
0.82
V
R
D
Dynamic resistance
150 °C
Max.
25
mΩ
I
DRM
/I
RRM
V
DRM
= V
RRM
25 °C
Max.
5
µA
125 °C
1.5
mA
150 °C
3.1
Table 5: Thermal resistance
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
Max.
1.1
°C/W
R
th(j-a)
Junction to ambient (DC)
S
(1)
= 1 cm2
Typ.
45
Notes:
(1)
S = copper surface under tab
P1-P3P4-P6P7-P9P10-P10

TN1605H-6G-TR

Mfr. #:
Buy TN1605H-6G-TR
Manufacturer:
STMicroelectronics
Description:
SCRs High Temperature 16A SCRs
Lifecycle:
New from this manufacturer.
Delivery:
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