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TN1605H-6G-TR
P1-P3
P4-P6
P7-P9
P10-P10
Characteristics
TN1605H-
6G
4/
10
DocID030162 Re
v 2
1.1
Characteristics
(curves)
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and DC on-state current versus
case temperature
Figure 3: Average and DC on-state current versus
ambient temperature
Figure 4: Relative variation of thermal impedance
versus pulse duration
Figure 5: Relative variation of gate trigger current
and gate voltage versus junction temperature
(typical values)
Figure 6: Relative variation of holding and latching
current versus junction temperature
(typical values)
0
2
4
6
8
10
12
14
16
18
0
5
10
15
α
= 30 °
α
= 60 °
α
= 90 °
α
= 120 °
α
= 180 °
DC
P(W)
I
T
(A
V)
(A)
α
36
0 °
0
2
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
α
= 30 °
α
= 60 °
α
= 90 °
α
= 120 °
α
= 180 °
DC
I
T
(A
V)
(A)
T
c
(°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
10
0
12
5
15
0
I
T(A
V)
(A)
DC
T
a
(°C)
α
= 180 °
DC
T
a
(°C)
α
= 180 °
1.0E
-02
1.0E
-01
1.0E
+00
1.0E
-03
1.0E
-02
1.0E
-01
1.0E
+0
0
1.0E
+0
1
1.0E
+02
1.0E
+0
3
K = [Z
th
/ R
th
]
Z
th(j-a)
Z
th(j-c)
t
P
(s)
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
V
GT
T
j
(°C)
I
GT
, V
GT
[ T
j
] / I
GT
, V
GT
[ T
j
= 25 °C]
I
GT
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
2.3
2.5
-50
-25
0
25
50
75
100
125
150
I
H
T
j
(°C)
I
H
, I
L
[ T
j
] / I
H
, I
L
[ T
j
= 25 °C]
I
L
TN1605H-
6G
Characteristics
DocID030162 Re
v 2
5/
10
Figure 7: Relative variation of static dV/dt
immunity versus junction temperature
(typical values)
Figure 8: Surge peak on-
st
ate current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current versus sinusoidal pulse width (t
P
< 10 ms).
Figure
10
: On-state characteristics
(maximum values)
Figure
11
: Relative variation of leakage current versus ju
nction temperature (tP < 10ms)
0
1
2
3
4
5
6
25
50
75
10
0
125
150
dV
/dt [
T
j
] / d
V/d
t [T
j
= 1
50
°C]
V
D
= V
R
= 4
02 V
T
j
(°C
)
Abo
ve
test
eq
uipm
en
t cap
abi
lity
0
50
100
150
1
10
100
1000
Non repetitive T
j
= 25 °C
Number of cycles
I
TSM
(A)
Repetitive T
c
= 133 °C
t
=10
ms
p
O
ne
cyc
le
1.E-0
4
1.E-0
3
1.E-0
2
1.E-0
1
1.E
+00
25
50
75
100
12
5
15
0
T
j
(°C)
V
DRM
=
V
RRM
=
600 V
I
DRM
, I
RRM
[ T
j
] / I
DRM
, I
RRM
[ T
j
= 150 °C ]
Package
inform
ation
TN1605H-
6G
6/
10
DocID030162 Re
v 2
2
Package informatio
n
In order to meet en
vironmental requirem
ents, ST of
f
ers these devices in diff
erent grades of
ECOPACK
®
packages, dep
ending on their level of en
vironm
ental compliance. ECOPAC
K
®
specifications, grade d
efinitions and product st
atus are available at:
w
ww.st.com
.
ECOPACK
®
is an ST tradem
ark.
Epoxy meets UL 94,
V0
Lead
-free pac
kage
2.1
D²PAK
package information
Figure
12
: D²PAK package outline
P1-P3
P4-P6
P7-P9
P10-P10
TN1605H-6G-TR
Mfr. #:
Buy TN1605H-6G-TR
Manufacturer:
STMicroelectronics
Description:
SCRs High Temperature 16A SCRs
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Products related to this Datasheet
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TN1605H-6G-TR