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Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4916DY
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
35
40
0.00 0.30 0.60 0.90 1.20 1.50
V
GS
= 10 thru 5 V
V
DS
– Drain-to-Source Voltage (V)
– Drain Current (A)I
D
3 V
4 V
0.010
0.013
0.016
0.019
0.022
0.025
0 5 10 15 20 25 30 35 40
– On-Resistance (Ω)
R
DS(on)
I
D
– Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
1
2
3
4
5
6
0123456789
I
D
= 7.5 A
– Gate-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
V
GS
V
DS
= 15 V
V
DS
= 10 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
35
40
012345
T
C
= 125 °C
- 55 °C
25 °C
V
GS
– Gate-to-Source Voltage (V)
– Drain Current (A)I
D
0
150
300
450
600
750
900
1050
0 6 12 18 24 30
V
DS
– Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C – Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V and 4.5 V
I
D
= 7.5 A
T
J
– Junction Temperature (°C)
R
DS(on)
– On-Resistance
(Normalized)
