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SI4916DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
7
Vishay Siliconix
Si4916DY
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
35
40
0.0 0.3 0.6 0.9 1.2 1.5
V
GS
= 10 thru 4 V
3 V
V
DS
– Drain-to-Source Voltage (V)
– Drain Current (A)I
D
0.010
0.013
0.016
0.019
0.022
0.025
0 5 10 15 20 25 30 35 40
V
GS
= 4.5 V
V
GS
= 10 V
– On-Resistance (Ω)R
DS(on)
I
D
– Drain Current (A)
0
1
2
3
4
5
6
0.0 2.2 4.4 6.6 8.8 11.0
I
D
= 7.8 A
– Gate-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
V
GS
V
DS
= 15 V
V
DS
= 10 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
35
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
25 °C
T
C
= 125 °C
- 55 °C
V
GS
– Gate-to-Source Voltage (V)
– Drain Current (A)I
D
0
280
560
840
1120
1400
0 5 10 15 20 25 30
C
rss
C
oss
C
iss
V
DS
– Drain-to-Source Voltage (V)
C – Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V and 4.5 V
I
D
= 7.8 A
T
J
– Junction Temperature (°C)
R
DS(on)
– On-Resistance
(Normalized)
www.vishay.com
8
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Vishay Siliconix
Si4916DY
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Reverse Current vs. Junction Temperature
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
J
= 150 °C
40
10
0.1
V
SD
– Source-to-Drain Voltage (V)
– Source Current (A)I
S
T
J
= 25 °C
1
0 25 50 75 100 125 150
– Reverse Current (mA)I
R
T
J
– Temperature (°C)
10
-1
1
10
10
-2
10
-3
10
-4
10
-5
30 V
24 V
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0246810
V
GS
– Gate-to-Source Voltage (V)
I
D
= 7.8 A
– On-Resistance (Ω)
R
DS(on)
0.001
0
1
100
40
60
100.1
Time (s)
20
80
Power (W)
0.01
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
T
C
= 25 °C
Single Pulse
– Drain Current (A)I
D
0.1
I
DM
Limited
I
D(on)
Limited
*
DS(on)
Limited by R
BVDSS Limited
1 ms
10 ms
100 ms
1 s
10 s
V
DS
–
>
Drain-to-Source Voltage (V)
* V
GS
minimum V
GS
at which R
DS(on)
is specified
DC
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
9
Vishay Siliconix
Si4916DY
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74331
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10
-
3
10
-
2
1 10 60010
-
1
10
-
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-
3
10
-
2
11010
-
1
10
-
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9P10-P12

SI4916DY-T1-GE3

Mfr. #:
Buy SI4916DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
Lifecycle:
New from this manufacturer.
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