MIO600-65E11 Datasheet MIO600-65E11 | P1-P3

1 - 5

20110119a

MIO 600-65E11

IXYS reserves the right to change limits, test conditions and dimensions.

I

C80

= 600 A

V

CES

= 6500 V

V

CE(sat) typ

= 4.2 V

IGBT Module

Single switch

Short Circuit SOA Capability

Square RBSOA

Features

• NPT³ IGBT

- Low-loss

- Smooth switching waveforms for

good EMC

• Industry standard package

- High power density

- AISiC base-plate for high power

cycling capacity

- AIN substrate for low thermal resistance

Typical Applications

• AC power converters for

- industrial drives

- windmills

- traction

• LASER pulse generator

C

9

C

7

C

5

C'

3

E

4

E

6

E

8

E'

1

G

2

Symbol Conditions Maximum Ratings

V

CES

V

GE

= 0 V 6500 V

V

GES

±

20 V

I

C85

T

C

= 85°C 600 A

I

CM

t

p

= 1 ms; T

C

= 85°C 1200 A

t

SC

V

CC

= 4400 V; V

CEM CHIP

=

<

6500 V; 10 µs

V

GE

< 15 V; T

VJ

< 125°C

IGBT

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

CE(sat)

 I

C

= 600 A; V

GE

= 15 V; T

VJ

= 25°C 4.2 V

T

VJ

= 125°C 5.4 V

V

GE(th)

I

C

= 240 mA; V

CE

= V

GE

68V

I

CES

V

CE

= 6500 V; V

GE

= 0 V; T

VJ

= 125°C 120 mA

I

GES

V

CE

= 0 V; V

GE

=

±

20 V; T

VJ

= 125°C 500 nA

t

d(on)

R

G

= 3.9 Ω 620 ns

t

r

R

G

= 3.9 Ω 270 ns

t

d(off)

R

G

= 2.7 Ω 1500 ns

t

f

R

G

= 2.7 Ω 930 ns

E

on

R

G

= 3.9 Ω 4250 mJ

E

off

R

G

= 2.7 Ω 3250 mJ

C

ies

150 nF

C

oes

V

CE

= 25 V; V

GE

= 0 V; f = 1 MHz 7.57 nF

C

res

1.46 nF

Q

ge

I

C

= 600 A; V

CE

= 3600 V; V

GE

=

±

15 V 9.65 µC

R

thJC

0.011 K/W

 Collector emitter saturation voltage is given at chip level

Inductive load; T

VJ

= 125°C;

V

GE

=

±

15 V; V

CC

= 3600 V;

I

C

= 600 A; L

σ

= 280 nH

p h a s e - o u t

2 - 5

20110119a

MIO 600-65E11

Diode

Symbol Conditions Maximum Ratings

I

F80

T

C

= 80°C 600 A

I

FSM

V

R

= 0 V; T

VJ

= 125°C; t

p

= 10 ms; half-sinewave 6000 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

 I

F

= 600 A; T

VJ

= 25°C 3.2 V

T

VJ

= 125°C 3.4 V

I

RM

930 A

t

rr

2200 ns

Q

RR

1150 µC

E

rec

2100 mJ

R

thJC

0.021 K/W

 Forward voltage is given at chip level

V

CC

= 3600 V; I

C

= 600 A;

V

GE

=

±

15 V; R

G

= 3.9 Ω; T

VJ

= 125°C

Inductive load; L

σ

= 280 nH

Symbol Conditions Maximum Ratings

T

JM

max junction temperature +125 °C

T

VJ

Operatingtemperature -40...+125 °C

T

stg

Storage temperature -40...+125 °C

V

ISOL

50 Hz, 1 min 10200 V~

M

d

Mounting torque Base-heatsink, M6 screws 4 - 6 Nm

Main terminals, M8 screws 8 - 10 Nm

Auxiliary terminals, M4 screws 2 - 3 Nm

Symbol Conditions Characteristic Values

min. typ. max.

d

A

Clearance distance terminal to base 40 mm

IEC 60664-1 / EN 50124-1 terminal to terminal 26 mm

d

S

Surface creepage dist. terminal to base 64 mm

IEC 60664-1 / EN 50124-1 terminal to terminal 56 mm

V

E

Partial discharge extinction voltage

f = 50 Hz, Q

PD

≤ 10pC (IEC 61287) 5100 V

CTI Comperative tracking index 600

L

σσ

σ

Module stray inductance, C to E terminal 18 nH

R

term-chip

* Resistance terminal to chip 0.12 mΩ

R

thCH

per module; λ grease = 1 W/m•K 0.006 K/W

Weight 1760 g

p h a s e - o u t

3 - 5

20110119a

MIO 600-65E11

Fig. 3 Typical on-state characteristics, chip level Fig. 4 Typical transfer characteristics, chip level

Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level

0

200

400

600

800

1000

1200

012345678

V

CE

[V]

I

C

[A]

T

vj

= 25 °C

9V

11V

13V

15V

17V

0

200

400

600

800

1000

1200

012345678910

V

CE

[V]

I

C

[A]

T

vj

= 125 °C

9V

11V

13V

15V

17V

0

200

400

600

800

1000

1200

012345678

V

CE

[V]

I

C

[A]

25 °C

125 °C

V

GE

= 15V

0

200

400

600

800

1000

1200

012345678910111213

V

GE

[V]

I

C

[A]

V

CE

= 20 V

25 °C

125 °C

0

5

10

15

20

0123456789

Q

g

[µC]

V

GE

[V]

V

CC

= 4400 V

I

C

= 600 A

T

vj

= 25 °C

V

CC

= 3600 V

1

10

100

1000

0 5 10 15 20 25 30 35

V

CE

[V]

C [nF]

C

ies

C

oes

C

res

V

GE

= 0V

f

OSC

= 1 MHz

V

OSC

= 50 mV

Fig. 5 Typical gate charge characteristics Fig. 6 Typical capacitances vs collector-emitter

voltage

p h a s e - o u t

MIO600-65E11

MIO600-65E11

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