OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MIO600-65E11

P1-P3P4-P5
© 2011 IXYS All rights reserved
4 - 5
20110119a
MIO 600-65E11
0
2
4
6
8
10
12
0 300 600 900 1200
I
C
[A]
E
on
, E
off
[J]
E
on
E
off
V
CC
= 3600V
R
Gon
= 3.9 ohm
R
Goff
= 2.7 ohm
V
GE
= ±15V
Tvj = 125 °C
L
s
= 280 nH
E
sw
[J] = 4.5 x 10
-6
x I
C
2
+ 8.6 x 10
-3
x I
C
+ 0.61
0
2
4
6
8
10
12
14
16
18
20
0 10203040
R
G
[ohm]
E
on
, E
off
[J]
V
CC
= 3600 V
I
C
= 600A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 280 nH
E
on
E
off
0.1
1
10
0 300 600 900 1200
I
C
[A]
t
d(on)
t
r
, t
d(off)
, t
f
[µs]
V
CC
= 3600 V
R
Gon
= 3.9 ohm
R
Goff
= 2.7 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 280 nH
t
d(off)
t
d(on)
t
f
t
r
0.1
1
10
010203040
R
G
[ohm]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
t
d(on)
t
d(off)
t
r
t
f
V
CC
= 3600 V
I
C
= 600 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 280 nH
0
0.5
1
1.5
2
2.5
0 1000 2000 3000 4000 5000 6000 7000
V
CE
[V]
I
Cpulse
/ I
C
Chip
Module
V
CC
≤
4400 V, T
vj
= 125 °C, V
GE
= ±15 V
R
Goff
= 2.7 ohm, L
σ
≤
280 nH
0
200
400
600
800
1000
1200
012345
V
F
[V]
I
F
[A]
25 °C
125 °C
Fig. 7 Typical switching energies per pulse Fig. 8 Typical switching energies per pulse
versus collector current versus gate resistor
Fig. 9 Typical switching times vs. collector current Fig. 10 Typical switching times vs. gate resistor
Fig. 11 Turn-off safe operating area (RBSOA) Fig. 12 Typ. diode forward characteristics,
chip level
Fig. 14 Typical diode forward characteristics, chip level
p h a s e - o u t
© 2011 IXYS All rights reserved
5 - 5
20110119a
MIO 600-65E11
0
500
1000
1500
2000
2500
3000
0 300 600 900 1200
I
F
[A]
E
rec
[mJ], Q
rr
[µC], I
rr
[A]
V
CC
= 3600 V
R
G
= 3.9 ohm
T
vj
= 125 °C
L
σ
= 280 nH
E
rec
I
rr
Q
rr
E
rec
[mJ] = -1.8 x 10
-3
x I
F
2
+ 3.93 x I
F
+ 403
0
500
1000
1500
2000
2500
01234
di/dt [kA/µs]
E
rec
[mJ]
0
200
400
600
800
1000
1200
Q
rr
[µC], I
rr
[A]
R
G
= 2.2 oh
m
R
G
= 2.7 oh
m
R
G
= 3.9 oh
m
R
G
= 5.6 oh
m
R
G
= 8.2 oh
m
R
G
= 15 oh
m
R
G
= 27 oh
m
V
CC
= 3600 V
I
F
= 600 A
T
vj
= 125 °C
L
σ
= 280 nH
E
rec
Q
rr
I
rr
0
200
400
600
800
1000
1200
1400
0 1000 2000 3000 4000 5000 6000 7000
V
R
[V]
I
R
[A]
V
CC
≤
4400 V
di/dt
≤
4000 A/µs
T
vj
= 125 °C
L
σ
≤
280 nH
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t [s]
Z
th(j-h)
[K/W] IGBT, DIODE
Z
th(j-c)
IGBT
Z
th(j-c)
Diode
Fig. 13 Typ. reverse recovery characteristics Fig. 14 Typ. reverse recovery characteristics
versus forward current versus di/dt
Fig. 15 Safe operating area diode (SOA) Fig. 16 Thermal impedance vs. time
Outline drawing
)e-(1R = (t)Z
n
1i
t/-
ic)-(jth
∑
=
i
τ
i12
IGBT R
i
[K/kW] 8.5 2
t
i
[ms] 151 5.84
DIODE R
i
[K/kW] 17 4.2
t
i
[ms] 144 5.83
p h a s e - o u t
P1-P3P4-P5

MIO600-65E11

Mfr. #:
Buy MIO600-65E11
Manufacturer:
Description:
IGBT MODULE SGL 600A E11
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet