VUB72-12NOXT Datasheet VUB72-12NOXT | P4-P6

VUB72-12NOXT

Ratings

Part Number (Typ)

yywwA

Date Code Prod. Index

Lot No.:

Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)

leer (33), lfd.# (33-36)

Package

T

op

°C

M

D

Nm2,5

mounting torque

2

T

VJ

°C150

virtual junction temperature

-40

Weight

g37

Symbol

Definition

typ.

max.

min.

Conditions

operation temperature

Unit

V

t = 1 second

V

t = 1 minute

isolation voltage

mm

6,0

12,0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

100 A

per terminal

125-40

terminal to terminal

V1-A-Pack

Similar Part Package Voltage class

VUB72-16NOXT V1-A-Pack 1600

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

0 50 100 150

0

1000

2000

3000

4000

5000

6000

700

0

R

[]

Typ. NTC resistance vs. temperature

T

C

[°C]

50/60 Hz, RMS; I ≤ 1 mA

ISOL

VUB72-12NOXT 510734Blister 24VUB72-12NOXTStandard

3600

ISOL

T

stg

°C125

storage temperature

-40

3000

threshold voltage

V0,79

mΩ

V

0 max

R

0 max

slope resistance *

6,5

1,1

40

1,16

43

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Rectifier Brake

IGBT

Brake

Diode

150 °C

* on die level

T = 25°

resistance

kΩ

2,27

K

VJ

3560

R

25

B

25/50

2,22,13

temperature coefficient

Symbol

Definition

typ.

max.

min.

Conditions

Unit

Temperature Sensor NTC

IXYS reserves the right to change limits, conditions and dimensions.

20151102dData according to IEC 60747and per semiconductor unless otherwise specified

VUB72-12NOXT

Remarks / Bemerkungen:

1. Nominal distance mounting screws on heat sink: 52 mm / Nennabstand Befestigungsschrauben auf Kühlkörper: 52 mm

2. General tolerance / Allgemeintoleranz : DIN ISO 2768 -T1-c

3. Surface treatment of pins: tin plated (Sn) in hot dip / Oberflächenbehandlung der Pins: verzinnt (Sn) im Tauchbad

38

1

2

4

5

7

9

10

6

52 (see 1)

5,5

25

25,75

5,5

15

12,2

1x45°

±0,3

11,75

±0,3

0,5

*11

= =

*14 *7 *14*7*0

25

25,75

±0,3

*11

*0

Ø 0,8

*

11,75

±0,3

Marking on product

Aufdruck der Typenbezeichnung

26

31,6

0,5

2

+0,2

3,6

±0,5

Ø 0,5

15,8

±1

8,3

±0,1

1 ±0,2

2 +0,2

35

63

13

17

R2

max. 0,25

±0,25

4,6

5

±1

Ø 6,1

Ø 2,5

1,5

Ø 2,1

4

6

9~

6

7~

1~

10

4

5

2

NTC

11 12

Outlines V1-A-Pack

IXYS reserves the right to change limits, conditions and dimensions.

20151102dData according to IEC 60747and per semiconductor unless otherwise specified

VUB72-12NOXT

011

400

800

1200

1600

2000

V

F

[V]

I

F

[A]

0.4 0.6 0.8 1.0 1.2 1.4 1.6

0

20

40

60

80

100

10

-3

10

-2

10

-1

10

0

200

300

400

5

0

1 10 100 1000 10000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0 25 50 75 100 125 150 1750 4 8 12 16 20 24 28 32

0

8

16

24

32

0 25 50 75 100 125 150

0

20

40

60

80

100

I

FSM

[A]

t [s]

t [ms]

I

2

t

[A

2

s]

P

tot

[W]

I

dAVM

[A]

T

A

[°C]

I

F(AV)M

[A]

T

C

[°C]

Z

thJC

[K/W]

t [ms]

Constants for Z

thJC

calculation:

i R

th

(K/W) t

i

(s)

1 0.0607 0.0004

2 0.1230 0.00256

3 0.2305 0.0045

4 0.4230 0.0242

5 0.2628 0.1800

0.8 x V

RRM

50 Hz

T

VJ

= 45°C

V

R

= 0 V

R

thJA

:

0.6 KW

0.8 KW

1 KW

2 KW

4 KW

8 KW

DC =

1

0.5

0.4

0.33

0.17

0.08

T

VJ

=

125°C

150°C

T

VJ

= 25°C

T

VJ

= 150°C

T

VJ

= 150°C

Fig. 1 Forward current vs.

voltage drop per diode

Fig. 2 Surge overload current

vs. time per diode

Fig. 3 I

2

t vs. time per diode

Fig. 4 Power dissipation vs. forward current

and ambient temperature per diode

Fig. 5 Max. forward current vs.

case temperature per diode

F

i

g.

6

Transie

n

t

therma

l

im

p

edance

j

uncti

o

n

to

cas

e

vs.

time

per

d

i

od

e

DC =

1

0.5

0.4

0.33

0.17

0.08

T

VJ

= 45°C

Rectifier

IXYS reserves the right to change limits, conditions and dimensions.

20151102dData according to IEC 60747and per semiconductor unless otherwise specified

VUB72-12NOXT

VUB72-12NOXT

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