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VUB72-12NOXT

P1-P3P4-P6P7-P8
VUB72-12NOXT
0 1 2 3
0
10
20
30
40
50
60
70
0 20 40 60 80
0
2
4
6
8
10
0 1 2 3 4 5
0
10
20
30
40
50
60
7
0
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
10
20
30
40
50
60
7
0
0 20 40 60 80 100 120 140
0
5
10
15
20
13 V
20 40 60 80
3
4
5
6
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy
versus collector current
E
off
Fig. 6 Typ. switching energy
versus gate resistance
R
G
[]
E
[mJ]
I
C
[A]
E
on
E
off
T
VJ
= 125°C
T
VJ
= 25°C
V
GE
= 15 V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
I
C
= 35 A
V
CE
= 600 V
R
G
= 27
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 35 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
0.0001 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
t [s]
Z
thJC
[K/W]
Fig.
7
T
y
p.
transie
n
t
therma
l
im
p
edanc
e
Brake IGBT
IXYS reserves the right to change limits, conditions and dimensions.
20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
VUB72-12NOXT
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
[°C]
200 600 10000 400 800
0
10
20
30
40
50
0001001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 1 2 3 4
0
5
10
15
20
25
30
35
40
I
RM
[A]
Q
rr
[μC]
I
F
[A]
V
F
[V] di
F
/dt [A/μs]
di
F
/dt [A/μs]
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
r
versus di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus di
F
/dt
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
I
RM
Q
r
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 25°C
100°C
150°C
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 125°C
V
R
= 800 V
T
VJ
= 125°C
V
R
= 800 V
200 600 10000 400 800
100
120
140
160
180
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
V
FR
[V]
t
rr
[ns]
t
fr
[µs]
di
F
/dt [A/μs] -d i
F
/dt [A/μs]
Fig. 5 Typ. recovery time
t
rr
versus di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
t
fr
V
FR
T
VJ
= 125°C
V
R
= 800 V
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
T
VJ
= 125°C
I
F
= 15 A
V
R
= 800 V
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
t [s]
Z
thJC
[K/W]
Fig. 7 Transient thermal impedance junction to case
Brake Diode
IXYS reserves the right to change limits, conditions and dimensions.
20151102dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
P1-P3P4-P6P7-P8

VUB72-12NOXT

Mfr. #:
Buy VUB72-12NOXT
Manufacturer:
Littelfuse
Description:
Bridge Rectifiers Standard Rectifier Bridge+Brake Unit
Lifecycle:
New from this manufacturer.
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