OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PESD12VL1BA,115

P1-P3P4-P6P7-P9
This is information on a product in full production.
March 2013 Doc ID 17414 Rev 5 1/9
9
HSP061-4NY8
4-line ESD protection for high speed lines
Datasheet production data
Figure 1. Functional schematic (top view)
Features
Flow-through routing to keep signal integrity
Ultralarge bandwidth: 6 GHz
Ultralow capacitance: 0.6 pF
Low time domain reflection
Low leakage current: 100 nA at 25 °C
Extended operating junction temperature
range: -40 °C to 150 °C
Package size in mm: 2 x 1 x 0.5
RoHS compliant
Benefits
High ESD robustness of the equipment
Suitable for high density boards
Complies with following standards
MIL-STD 883G Method 3015-7 Class 3B:
–8 kV
IEC 61000-4-2 level 4:
– 8 kV (contact discharge)
– 15 kV (air discharge)
Applications
The HSP061-4NY8 is designed to protect against
electrostatic discharge on sub micron technology
circuits driving:
HDMI 1.3 and 1.4
Digital Video Interface
Display Port
USB 3.0
Serial ATA
Description
The HSP061-4NY8 is a 4-channel ESD array with
a rail to rail architecture designed specifically for
the protection of high speed differential lines.
The ultra-low variation of the capacitance ensures
very low influence on signal-skew. The large
bandwidth and the low reflection make it
compatible with 5 Gbps.
The device is packaged in µQFN-8L with a
400 µm pitch, which minimizes the PCB area.
µQFN-8L package
I/O 1
I/O 2
GND
I/O 3
I/O 4
Internally
not connected
GND
Internally
not connected
1
2
4
5
6
8
3
7
www.st.com
Characteristics HSP061-4NY8
2/9 Doc ID 17414 Rev 5
1 Characteristics
Table 1. Absolute maximum ratings T
amb
= 25 °C
Symbol Parameter Value Unit
V
PP
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
8
20
kV
I
pp
Repetitive peak pulse current (8/20 µs) 3 A
T
j
Operating junction temperature range -40 to +150 °C
T
stg
Storage temperature range -65 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Table 2. Electrical characteristics T
amb
= 25 °C
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR
Breakdown voltage I
R
= 1 mA 6 V
I
RM
Leakage current V
RM
= 3 V 100 nA
V
CL
Clamping voltage
IEC 61000-4-2, +8 kV
contact (I
PP
= 30 A),
measured at 30 ns
18 V
C
I/O - GND
Capacitance (input/output to
ground)
V
I/O
= 0 V,
F = (200 MHz - 3000 MHz),
V
OSC
= 30 mV
0.5 0.6 pF
C
I/O - GND
Capacitance variation
(input/output to ground)
V
I/O
= 0 V F = 1 MHz,
V
OSC
= 30 mV
0.03 0.05 pF
f
C
Cut-off frequency -3dB 6 GHz
Z
Diff
Differential impedance
t
r
= 200 ps (10 - 90%)
(1)
Z
0 Diff
= 100
85 100 115
1. HDMI specification conditions. This information can be provided for other applications. Please contact your
local ST office.
Doc ID 17414 Rev 5 3/9
HSP061-4NY8 Characteristics
Figure 2. Leakage current versus junction
temperature (typical values)
Figure 3. S21 attenuation measurement
Tj (°C)
0.01
0.10
1.00
10.00
25 50 75 100 125 150
I
R
(nA)
V
R
=V
RM
= 3 V
10 MHz 30 MHz 100 MHz 300 MHz 1 GHz 3 GHz
-12
-9
-6
-3
0
-12
-9
-6
-3
0
db
f (Hz)
Figure 4. Differential impedance (Z
diff
)
(1)
Figure 5. Eye diagram - HDMI mask at 3.4 Gbps
per channel
(1)
1. HDMI specification conditions. This information can be provided for other applications. Please contact your
local ST office.
tr = 200 ps (10% - 90%)
12.5 Ω /div
Z
0Diff
= 100 Ω
Vertical : 200 mV / div
Horizontal : 50 ps / div
Figure 6. ESD response to IEC 61000-4-2
(+8 kV contact discharge)
Figure 7. ESD response to IEC 61000-4-2
(-8 kV contact discharge)
50 V / div
20 ns / div
20 GS / s
50 V / div
20 ns / div
20 GS / s
P1-P3P4-P6P7-P9

PESD12VL1BA,115

Mfr. #:
Buy PESD12VL1BA,115
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors 12V BIDIRECTIONL ESD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet