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SI2337DS-T1-GE3

P1-P3P4-P6P7-P9P10-P10
Si2337DS
www.vishay.com
Vishay Siliconix
S15-0683-Rev. E, 06-Apr-15
4
Document Number: 73533
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
1.0 1.20.0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
)A( tnerruC ecruoS -I
S
0.1
1
10
20
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
)
h
t(
S
G
)
V(
0.1
0.2
0.3
0.4
0.5
0.6
34567
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
() ecnatsiseR-nO ecruoS-ot-niarD -
T
A
= 25 °C
T
A
= 125 °C
I
D
= 1.2 A
0
2
4
6
8
10
12
14
16
)W(
rewoP
Time (s)
0.01 0.1 1 10 100 1000
0.001
0.01
0.1
1
10
100
1000
0.1 1 10 100
1000
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
T
A
= 25 °C
Single Pulse
1 ms
10 ms
100 ms
DC
1 s
10 s
Limited by R
DS(on)
*
I
DM
Limited
I
D(on)
Limited
BVDSS Limited
Si2337DS
www.vishay.com
Vishay Siliconix
S15-0683-Rev. E, 06-Apr-15
5
Document Number: 73533
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating* Power Derating
Single Pulse Avalanche Capability
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0 25 50 75 100 125 150
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
25 50 75 100 125 150
T
C
- Case Temperature (°C)
r (W)ewoP
1
10
T
A
- Time In Avalanche (s)
I
C
)A(
t
n
err
uC
e
h
cn
al
a
v
A
ka
eP
-
T
A
L I
A
BV V
DD
1.0E-6 10.0E-6 100.0E-6 1.0E-3 10.0E-3
-
Si2337DS
www.vishay.com
Vishay Siliconix
S15-0683-Rev. E, 06-Apr-15
6
Document Number: 73533
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73533
.
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
2
1
0.1
0.01
Square Wave Pulse Duration (s)
10
-4
10
-3
10
-2
10
-1
110 600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 166 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
100
10
-3
10
-2
110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT ev
i
tceffE de
z
ilamroN
ecnadepmI
la
mre
hT
P1-P3P4-P6P7-P9P10-P10

SI2337DS-T1-GE3

Mfr. #:
Buy SI2337DS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -80V Vds 20V Vgs SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
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