SI2337DS-T1-GE3

Mfr. #:: SI2337DS-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET -80V Vds 20V Vgs SOT-23
Lifecycle:: New from this manufacturer.
Datasheet:: SI2337DS-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: SI2337DS-T1-GE3 Datasheet SI2337DS-T1-GE3 Datasheet (P4-P6)SI2337DS-T1-GE3 Datasheet (P7-P9)SI2337DS-T1-GE3 Datasheet (P10)
ECAD Model:
More Information:: SI2337DS-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-23-3

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.45 mm

Length:: 2.9 mm

Series:: SI2

Width:: 1.6 mm

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SI2337DS-GE3

Unit Weight:: 0.000282 oz

Tags: SI2337, SI233, SI23, SI2

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2337DS-T1-GE3 Description

***-Wing Technology: In a Pack of 20, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3

*** Source Electronics: Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R / MOSFET P-CH 80V 2.2A SOT23-3

***enic: 80V 2.2A 270m´Î@10V1.2A 760mW 4V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ure Electronics: Single P-Channel 80 V 0.27 Ohms Surface Mount Power Mosfet - TO-236

***nsix Microsemi: Small Signal Field-Effect Transistor, 0.0012A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***nell: MOSFET, P CH, 80V, 2.2A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.216ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:760mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; Operating Temperature Range:-55°C to +150°C

***(Formerly Allied Electronics): MOSFET; P-CH; Vds -60V; Vgs +/- 20V; Rds(on) 285mohm; Id 1.6A; SOT-23; Pd 1.7W

***ure Electronics: SI2309CDS Series P-Channel 60 V 0.345 Ohm Power MosFet Surface Mount - SOT-23-3

***et: Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R

***enic: 60V 1.6A 345m¦¸@10V,1.25A 1W 3V@250¦ÌA P Channel SOT-23(SOT-23-3) MOSFETs ROHS

*** Stop Electro: Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:1.7W; No. of Pins:3Pins RoHS Compliant: No

***ure Electronics: P-Channel 60 V 0.345 Ohm 1.7 W Surface Mount Mosfet - SOT-23-3

***p One Stop: Trans MOSFET P-CH 60V 1.2A Automotive 3-Pin SOT-23 T/R

***roFlash: Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.2A; On Resistance Rds(On):0.285Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: No

*** Source Electronics: Trans MOSFET N-CH 100V 2.3A 3-Pin SOT-23 T/R / MOSFET N-CH 100V 2.3A SOT-23

***ure Electronics: Single N-Channel 100 V 0.278 Ohm 5.8 nC 1.25 W Silicon SMT Mosfet - SOT-23

***icontronic: Small Signal Field-Effect Transistor, 2.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ure Electronics: ZXMN10A07F Series 100 V 0.7 Ohm N-Channel Enhancement Mode MOSFET -SOT-23

***et: Trans MOSFET N-CH 100V 0.8A 3-Pin SOT-23 T/R

***(Formerly Allied Electronics): MOSFET N-Channel 100V 0.8A SOT23 | Diodes Inc ZXMN10A07FTA

***nell: MOSFET, N CH, 100V, 0.7A, 0.625W; Transistor Polarity: N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 625mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

*** Source Electronics: MOSFET N-CH 60V 1.3A SOT23F / Current Limit SW 1-IN 1-OUT 0V to 5.5V 2.2A 3-Pin SOT-23F T/R

***ure Electronics: ZXMS6004 60 V 0.35 Ohm N-Channel Self Protected INTELLIFETTM MOSFET - SOT-23F

***(Formerly Allied Electronics): MOSFET IntelliFET N-ch 60V 1.3A SOT23F | Diodes Inc ZXMS6004FFTA

***ment14 APAC: MOSFET,N CH,60V,1.3A,SOT23F; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Source Voltage Vds:60V; On Resistance

***ark: Mosfet, N Channel, 60V, 2A , Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Diodes Inc. ZXMS6004FFTA

***nell: MOSFET,N CH,60V,1.3A,SOT23F; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-23F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 2A; Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +150°C; Voltage Vgs Max: 6V

*** Source Electronics: Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3

***ure Electronics: N-Channel 60 V 4 Ohm MosFet Surface Mount - SOT-23-3

***ark: Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002E-7-F

SI2337DS-T1-GE3 More Information

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Part #	Mfg.	Description	Stock	Price
SI2337DS-T1-GE3 DISTI # V72:2272_09216813	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	1420	1000:$0.4149 500:$0.5490 250:$0.5731 100:$0.6367 25:$0.7453 10:$0.9110 1:$1.0989
SI2337DS-T1-GE3 DISTI # V36:1790_09216813	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000:$0.3954
SI2337DS-T1-GE3 DISTI # SI2337DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 80V 2.2A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3245In Stock	1000:$0.4704 500:$0.5959 100:$0.7214 10:$0.9250 1:$1.0400
SI2337DS-T1-GE3 DISTI # SI2337DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 80V 2.2A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3245In Stock	1000:$0.4704 500:$0.5959 100:$0.7214 10:$0.9250 1:$1.0400
SI2337DS-T1-GE3 DISTI # SI2337DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 80V 2.2A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.3898 6000:$0.4050 3000:$0.4263
SI2337DS-T1-GE3 DISTI # 33791495	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	18000	3000:$0.2700
SI2337DS-T1-GE3 DISTI # 32316383	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	3000	3000:$0.6234
SI2337DS-T1-GE3 DISTI # 29542623	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	1420	18:$1.0989
SI2337DS-T1-GE3 DISTI # SI2337DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R (Alt: SI2337DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000	150000:$0.3300 75000:$0.3356 30000:$0.3414 15000:$0.3536 9000:$0.3667 6000:$0.3808 3000:$0.3960
SI2337DS-T1-GE3 DISTI # SI2337DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R (Alt: SI2337DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 9000	30000:€0.3119 18000:€0.3349 12000:€0.3629 6000:€0.4219 3000:€0.6179
SI2337DS-T1-GE3 DISTI # SI2337DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2337DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3709 18000:$0.3819 12000:$0.3919 6000:$0.4089 3000:$0.4219
SI2337DS-T1-GE3 DISTI # SI2337DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2337DS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Cut Tape	Americas - 0	1:$0.5273
SI2337DS-T1-GE3 DISTI # 26R1861	Vishay Intertechnologies	Trans MOSFET P-CH 80V 1.2A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 26R1861) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.5440 500:$0.6900 250:$0.7460 100:$0.8010 50:$0.9240 25:$1.0500 1:$1.2800
SI2337DS-T1-GE3 DISTI # 26R1861	Vishay Intertechnologies	P CHANNEL MOSFET, -80V, 2.2A TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.216ohm,Rds(on) Test Voltage Vgs:-6V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes	2264	1:$0.3420 25:$0.3420 50:$0.3420 100:$0.3420 250:$0.3420 500:$0.3420 1000:$0.3420
SI2337DS-T1-GE3 DISTI # 15R4916	Vishay Intertechnologies	P CHANNEL MOSFET, -80V, 2.2A TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.216ohm,Rds(on) Test Voltage Vgs:-6V,Threshold Voltage Vgs:-4V RoHS Compliant: Yes	0	10000:$0.3690 6000:$0.3770 4000:$0.3920 2000:$0.4350 1000:$0.4790 1:$0.4990
SI2337DS-T1-GE3. DISTI # 30AC0142	Vishay Intertechnologies	P CHANNEL MOSFET, -80V, 2.2A TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.2A,Drain Source Voltage Vds:-80V,On Resistance Rds(on):0.216ohm,Rds(on) Test Voltage Vgs:-6V,Threshold Voltage Vgs:-4V RoHS Compliant: No	0	10000:$0.3690 6000:$0.3770 4000:$0.3920 2000:$0.4350 1000:$0.4790 1:$0.4990
SI2337DS-T1-GE3 DISTI # 70616156	Vishay Siliconix	SI2337DS-T1-GE3 P-channel MOSFET Transistor,1.75 A,80 V,3-Pin TO-236 RoHS: Compliant	0	300:$0.6800 600:$0.6300 1500:$0.5800 3000:$0.5200
SI2337DS-T1-GE3 DISTI # 781-SI2337DS-GE3	Vishay Intertechnologies	MOSFET -80V Vds 20V Vgs SOT-23 RoHS: Compliant	14422	1:$1.0100 10:$0.8350 100:$0.6400 500:$0.5510 1000:$0.4340 3000:$0.4050 6000:$0.3850 9000:$0.3770
SI2337DS-T1-GE3	Vishay Intertechnologies	Single P-Channel 80 V 0.27 Ohms Surface Mount Power Mosfet - TO-236 RoHS: Compliant	6000Reel	3000:$0.3800
SI2337DS-T1-GE3 DISTI # 8123123	Vishay Intertechnologies	TRANS MOSFET P-CH 80V 1.2A 3-PIN, PK	480	3000:£0.3510 1500:£0.3800 600:£0.4820 300:£0.6060 20:£0.7900
SI2337DS-T1-GE3 DISTI # 8123123P	Vishay Intertechnologies	TRANS MOSFET P-CH 80V 1.2A 3-PIN, RL	5300	3000:£0.3510 1500:£0.3800 600:£0.4820 300:£0.6060
SI2337DS-T1-GE3 DISTI # SI2337DS-T1-GE3	Vishay Intertechnologies	Transistor: P-MOSFET,unipolar,-80V,-1.75A,1.6W,SOT23	499	500:$0.3900 100:$0.4300 25:$0.4700 5:$0.5300 1:$0.6000
SI2337DS-T1-GE3	Vishay Intertechnologies	MOSFET -80V Vds 20V Vgs SOT-23 RoHS: Compliant	Americas - 3000
SI2337DS-T1-GE3 DISTI # XSKDRABV0026474	Vishay Intertechnologies	RoHS: Compliant	6000 in Stock0 on Order	6000:$0.4253 3000:$0.4557
SI2337DS-T1-GE3 DISTI # XSFP00000118596	Vishay Siliconix	RoHS: Compliant	6000 in Stock0 on Order	6000:$0.5067 3000:$0.5429
SI2337DS-T1-GE3 DISTI # 2101437	Vishay Intertechnologies	MOSFET, P CH, 80V, 2.2A, TO-236 RoHS: Compliant	577	3000:$0.6430 1000:$0.6560 500:$0.8320 100:$0.9660 5:$1.2600
SI2337DS-T1-GE3 DISTI # 2101437	Vishay Intertechnologies	MOSFET, P CH, 80V, 2.2A, TO-236	4239	500:£0.4290 250:£0.4640 100:£0.4990 10:£0.7070 1:£0.8980

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SI2337DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes