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MT36JSZF51272PZ-1G4G1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's mem-
ory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 SDRAM RDIMM
DRAM Operating Conditions
PDF: 09005aef83992c00
jszf36c512_1gx72pz.pdf - Rev. D 2/11 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 4GB
Values are for the MT41J256M4 DDR3 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
1926 1746 1566 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
2286 2106 1926 mA
Precharge power-down current: Slow exit I
DD2P0
2
432 432 432 mA
Precharge power-down current: Fast exit I
DD2P1
2
1620 1440 1260 mA
Precharge quiet standby current I
DD2Q
2
2412 2160 1908 mA
Precharge standby current I
DD2N
2
2520 2340 1980 mA
Precharge standby ODT current I
DD2NT
2
1926 1746 1566 mA
Active power-down current I
DD3P
2
1620 1440 1260 mA
Active standby current I
DD3N
2
2412 2232 2052 mA
Burst read operating current I
DD4R
1
4716 3816 3096 mA
Burst write operating current I
DD4W
1
4716 4176 3636 mA
Refresh current I
DD5B
2
9360 8640 7920 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
216 216 216 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
324 324 324 mA
All banks interleaved read current I
DD7
1
7416 5886 4716 mA
Reset current I
DD8
1
504 504 504 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
Table 13: DDR3 I
DD
Specifications and Conditions – 8GB
Values are for the MT41J512M4 DDR3 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4)
component data sheet, die rev D
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
1
1926 1746 1566 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1
2106 2016 1926 mA
Precharge power-down current: Slow exit I
DD2P0
2
432 432 432 mA
Precharge power-down current: Fast exit I
DD2P1
2
1260 1080 900 mA
Precharge quiet standby current I
DD2Q
2
1440 1260 1080 mA
Precharge standby current I
DD2N
2
1512 1332 1152 mA
Precharge standby ODT current I
DD2NT
2
1116 1026 936 mA
Active power-down current I
DD3P
2
1440 1260 1080 mA
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 SDRAM RDIMM
I
DD
Specifications
PDF: 09005aef83992c00
jszf36c512_1gx72pz.pdf - Rev. D 2/11 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 13: DDR3 I
DD
Specifications and Conditions – 8GB (Continued)
Values are for the MT41J512M4 DDR3 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4)
component data sheet, die rev D
Parameter Symbol 1600 1333 1066 Units
Active standby current I
DD3N
2
1620 1440 1260 mA
Burst read operating current I
DD4R
1
3186 2826 2466 mA
Burst write operating current I
DD4W
1
3276 3006 2646 mA
Refresh current I
DD5B
2
7740 7200 6840 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
432 432 432 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
2
540 540 540 mA
All banks interleaved read current I
DD7
1
8046 7146 6246 mA
Reset current I
DD8
1
504 504 504 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 SDRAM RDIMM
I
DD
Specifications
PDF: 09005aef83992c00
jszf36c512_1gx72pz.pdf - Rev. D 2/11 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MT36JSZF51272PZ-1G4G1

Mfr. #:
Buy MT36JSZF51272PZ-1G4G1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240RDIMM
Lifecycle:
New from this manufacturer.
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