ZXM61P03F
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
2
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
θJA
200 °C/W
Junction to Ambient (b) R
θJA
155 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
-30 V
Gate- Source Voltage V
GS
⫾20 V
Continuous Drain Current
(V
GS
=-10V; T
A
=25°C)(b)
(V
GS
=-10V; T
A
=70°C)(b)
I
D
-1.1
-0.9
A
Pulsed Drain Current (c) I
DM
-4.3 A
Continuous Source Current (Body Diode)(b) I
S
-0.88 A
Pulsed Source Current (Body Diode)(c) I
SM
-4.3 A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
625
5
mW
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
