IXGH72N60B3 Datasheet IXGH72N60B3 | P1-P3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 600 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES,

V

GE

= 0V 75 μA

T

J

= 125°C 750 μA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 60A, V

GE

= 15V, Note 1 1.51 1.80 V

T

J

= 125°C 1.48 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Limited by Leads) 75 A

I

C110

T

C

= 110°C72A

I

CM

T

C

= 25°C, 1ms 400 A

I

A

T

C

= 25°C20A

E

AS

T

C

= 25°C 200 mJ

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 3Ω I

CM

= 240 A

(RBSOA) Clamped Inductive Load @ V

CE

≤ 600 V

P

C

T

C

= 25°C 540 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10 seconds 260 °C

Weight TO-247 6 g

TO-268 5 g

DS99847A(02/09)

V

CES

= 600V

I

C110

= 72A

V

CE(sat)

≤≤

≤£ 1.80V

t

fi(typ)

= 90ns

GenX3

TM

B3-Class

IGBTs

Medium Speed low Vsat PT

IGBTs 5-40 kHz Switching

IXGH72N60B3

IXGT72N60B3

TO-247 AD (IXGH)

G

C

E

G = Gate C = Collector

E = Emitter TAB = Collector

(TAB)

TO-268 (IXGT)

G

E

(TAB)

Features

z

Optimized for Low Conduction and

Switching Losses

z

Square RBSOA

z

Avalanche Rated

z

International Standard Packages

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH72N60B3

IXGT72N60B3

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 50 83 S

C

ies

6800 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 575 pF

C

res

80 pF

Q

g

230 nC

Q

ge

I

C

= 60A, V

GE

= 15V, V

CE

= 0.5 • V

CES

40 nC

Q

gc

82 nC

t

d(on)

31 ns

t

ri

33 ns

E

on

1.38 mJ

t

d(off)

150 330 ns

t

fi

90 160 ns

E

off

1.05 2.0 mJ

t

d(on)

29 ns

t

ri

34 ns

E

on

2.70 mJ

t

d(off)

228 ns

t

fi

142 ns

E

off

2.20 mJ

R

thJC

0.23 °C/W

R

thCS

(TO-247) 0.25 °C/W

Inductive load, T

J

= 25

°°

°C

I

C

= 50A, V

GE

= 15V

V

CE

= 480V, R

G

= 3Ω

Inductive load, T

J

= 125

°°

°C

I

C

= 50A,V

GE

= 15V

V

CE

= 480V,R

G

= 3Ω

Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-268 Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 AD Outline

IXGH72N60B3

IXGT72N60B3

Fig. 1. Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

30

60

90

120

150

180

210

240

270

300

330

012345678

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

11V

7V

9V

Fig. 3. Output Characteristics

@ 125ºC

0

20

40

60

80

100

120

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

9V

7V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 120A

I

C

= 60A

I

C

= 30A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

56789101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 120A

60A

30A

T

J

= 25ºC

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

180

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXGH72N60B3

IXGH72N60B3

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