© 2009 IXYS CORPORATION, All Rights Reserved
IXGH72N60B3
IXGT72N60B3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
=100A
I
C
= 25A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
80
100
120
140
160
180
200
220
240
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
100
250
400
550
700
850
1000
1150
1300
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 25A
I
C
= 100A
I
C
= 25A, 50A, 100A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0
1
2
3
4
5
6
7
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0
1
2
3
4
5
6
7
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
6
7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
I
C
= 25A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
70
90
110
130
150
170
190
210
230
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
f
- Nanoseconds
130
145
160
175
190
205
220
235
250
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
60
80
100
120
140
160
180
200
220
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
140
155
170
185
200
215
230
245
260
t
d(off)
- Nanoseconds
t
r
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 480V
I
C
= 25A, 50A, 100A
