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4N25V

P1-P3P4-P6P7-P8
Document Number: 83530 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.0, 26-Oct-09 139
Optocoupler, Phototransistor Output
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors
DESCRIPTION
The 4N25V, 4N25GV, 4N35V, 4N35GV series consists of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
DIN EN 60747-5-5 (VDE 0884)
Optocoupler for electrical safety requirements
IEC 60950
Office machines (applied for reinforced isolation for mains
voltage ≤ 400 V
RMS
)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related household
apparatus
FEATURES
• Special construction: therefore, extra low
coupling capacity of typical 0.2 pF, high
common mode rejection
• Low temperature coefficient of CTR
• Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
•
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
• Thickness through insulation ≥ 0.4 mm
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI ≥ 275
• Rated impulse voltage (transient overvoltage)
V
IOTM
= 6 kV peak
• Isolation test voltage (partial discharge test voltage)
V
pd
= 1.6 kV
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage ≤ 300 V
- for appl. class I - III at mains voltage ≤ 600 V
according to DIN EN 60747-5-5
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: BS EN 41003, BS EN 60065 (BS 415), pending
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO (SETI): EN 60950, certificate no. FI25155
Note
(1)
G = leadform 10.16 mm; G is not marked on the body.
C
E
B
18537_4
231
546
NCC(-)A (+)
V
DE
17201_4
ORDER INFORMATION
(1)
PART REMARKS
4N25GV CTR > 20 % wide lead spacing, DIP-6
4N35GV CTR > 100 % wide lead spacing, DIP-6
4N25V CTR > 20 %, DIP-6
4N35V CTR > 100 %, DIP-6
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83530
140 Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors
Optocoupler, Phototransistor Output
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
Note
(1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 µs I
FSM
3A
Power dissipation P
diss
70 mW
Junction temperature T
j
125 °C
OUTPUT
Collector emitter voltage V
CEO
32 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation P
diss
70 mW
Junction temperature T
j
125 °C
COUPLER
Isolation test voltage (RMS) V
ISO
5000 V
RMS
Total power dissipation P
tot
200 mW
Ambient temperature range T
amb
- 55 to + 100 °C
Storage temperature range T
stg
- 55 to + 125 °C
Soldering temperature
(2)
2 mm from case, t ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.2 1.4 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
32 V
Emitter collector voltage I
E
= 100 µA V
ECO
7V
Collector emitter leakage current
V
CE
= 10 V, I
F
= 0,
T
amb
= 100 °C
I
CEO
50 nA
V
CE
= 30 V, I
F
= 0,
T
amb
= 100 °C
I
CEO
500 nA
COUPLER
Collector emitter saturation voltage I
F
= 50 mA, I
C
= 2 mA V
CEsat
0.3 V
Cut-off frequency
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100 Ω
f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
1pF
Document Number: 83530 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.0, 26-Oct-09 141
4N25V, 4N25GV, 4N35V, 4N35GV
Optocoupler, Phototransistor Output
Vishay Semiconductors
Note
(1)
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-; IEC 60747
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 10 V, I
F
= 10 mA
4N25V CTR
20 100 %
4N25GV CTR
4N35V CTR
100 150 %
4N35GV CTR
V
CE
= 10 V, I
F
= 10 mA,
T
amb
= 100 °C
4N35V CTR
40 %
4N35GV CTR
MAXIMUM SAFETY RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward current I
F
130 mA
OUTPUT
Power dissipation P
diss
265 mW
COUPLER
Rated impulse voltage V
IOTM
6kV
Safety temperature T
si
150 °C
INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
1600 V
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
IOTM
6000 V
V
pd
1400 V
Insulation resistance
V
IO
= 500 V R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Ω
0 25 50 75 125
0
50
100
150
200
300
P
tot
- Total Power Dissipation (mW)
T
si
- Safety Temperature (°C)
150
94 9182
100
250
Phototransistor
P
si
(mW)
IR-diode
I
si
(mA)
t
13930
t
1
, t
2
= 1 to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
P1-P3P4-P6P7-P8

4N25V

Mfr. #:
Buy 4N25V
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR >20%
Lifecycle:
New from this manufacturer.
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