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4N25V

P1-P3P4-P6P7-P8
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83530
142 Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors
Optocoupler, Phototransistor Output
Fig. 3 - Test circuit, Non-Saturated Operation Fig. 4 - Test Circuit, Saturated Operation
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Delay time
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω,
4N25V
4N25GV
t
d
4µs
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
4N35V
4N35GV
t
d
2.5 µs
Rise time
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω,
4N25V
4N25GV
t
r
7µs
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
4N35V
4N35GV
t
r
3µs
Fall time
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω,
4N25V
4N25GV
t
f
6.7 µs
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
4N35V
4N35GV
t
f
4.2 µs
Storage time
(see figure 3)
V
S
= 5 V, I
C
= 5mA, R
L
= 100 Ω,
4N25V
4N25GV
t
s
0.3 µs
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
4N35V
4N35GV
t
s
0.3 µs
Turn-on time
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω,
4N25V
4N25GV
t
on
11 µs
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
4N35V
4N35GV
t
on
10 µs
Turn-off time
(see figure 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω,
4N25V
4N25GV
t
off
7µs
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω,
4N35V
4N35GV
t
off
10 µs
Turn-on time
(see figure 4)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ,
4N25V
4N25GV
t
on
25 µs
4N35V
4N35GV
t
on
9µs
Turn-off time
(see figure 4)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ,
4N25V
4N25GV
t
off
42.5 µs
4N35V
4N35GV
t
off
25 µs
Channel I
Channel II
14950
R
G
= 50
t
p
t
p
= 50 s
T
= 0.01
+ 5 V
I
C
= 5 mA / 2 mA
adjusted through
input amplitude
I
F
0
I
F
50 100
Oscilloscope
R
L
1 M
C
L
20 pF
Channel I
Channel II
95 10844
R
G
= 50
t
p
t
p
= 50 s
T
= 0.01
+ 5 V
I
C
I
F
0
I
F
= 10 mA
50 1 k
Oscilloscope
R
L
1 M
C
L
20 pF
Document Number: 83530 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.0, 26-Oct-09 143
4N25V, 4N25GV, 4N35V, 4N35GV
Optocoupler, Phototransistor Output
Vishay Semiconductors
Fig. 5 - Switching Times
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
t
p
t
t
0
0
10 %
90 %
100 %
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
t
p
Pulse duration
t
d
Delay time
t
r
Rise time
t
on
(= t
d
+ t
r
) Turn-on time
t
s
Storage time
t
f
Fall time
t
off
(= t
s
+ t
f
)Turn-off time
96 11698
0
50
100
150
200
250
300
04080 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
1.2
0.8
0.4
2.0
0.5
0.6
0.7
0.
8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
T
amb
- Ambient Temperature (°C)
96 11874
CTR
rel
- Relative Current Transfer Ratio
V
CE
= 10 V
I
F
= 10 mA
1
10
100
1000
10 000
0
T
amb
- Ambient Temperature (°C)
96 11875
I
CEO
- Collector Dark Current (nA)
V
CE
= 10 V
I
F
= 0 A
70
60
50
40
30
20
10
10090
80
www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83530
144 Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors
Optocoupler, Phototransistor Output
Fig. 10 - Collector Base Current vs. Forward Current
Fig. 11 - Collector Current vs. Forward Current
Fig. 12 - Collector Current vs. Collector Emitter Voltage
Fig. 13 - Collector Emitter Saturation Voltage vs.
Collector Current
Fig. 14 - DC Current Gain vs. Collector Current
Fig. 15 - Current Transfer Ratio vs. Forward Current
0.001
0.010
0.100
1.000
110100
I
F
- Forward Current (mA)
96 11876
I
CB
- Collector Base Current (mA)
V
CB
= 10 V
0.01
0.1
1
10
100
0.1 1 10 100
I
F
- Forward Current (mA)
96 11904
V
CE
= 10 V
I
C
- Collector Current (mA)
0.1
1
10
100
0.1 1 10 100
V
CE
- Collector Emitter (V)
96 11905
I
C
- Collector Current (mA)
20 mA
10 mA
5 mA
2 mA
1 mA
I
F
= 50 mA
110
0
0.2
0.4
0.6
0.
8
1.0
V
CEsat
- Collector Emitter
Saturation Voltage (V)
I
C
- Collector Current (mA)
100
95 10972
10 % used
CTR = 50 %
used
20 % used
0.01 0.1 1 10
0
200
400
600
800
1000
h
FE
- DC Current Gain
I
C
- Collector Current (mA)
100
95 10973
V
CE
= 10 V
5 V
0.1 1 10
1
10
100
1000
CTR - Current Transfer Ratio (%)
I
F
- Forward Current (mA)
100
95 10976
V
CE
= 20 V
P1-P3P4-P6P7-P8

4N25V

Mfr. #:
Buy 4N25V
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR >20%
Lifecycle:
New from this manufacturer.
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