I
DD
Specifications
Table 13: DDR4 I
DD
Specifications and Conditions – 4GB (Die Revision B)
Values are for the MT40A512M16 DDR4 SDRAM only and are computed from values specified in the 8Gb (512 Meg x 16)
component data sheet
Parameter Symbol 2666 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
340 320 300 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, I
PP
current I
PP0
16 16 16 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
420 400 380 mA
Precharge standby current I
DD2N
140 136 132 mA
Precharge standby ODT current I
DD2NT
300 300 268 mA
Precharge power-down current I
DD2P
100 100 100 mA
Precharge quiet standby current I
DD2Q
120 120 120 mA
Active standby current I
DD3N
200 188 176 mA
Active standby I
PP
current I
PP3N
12 12 12 mA
Active power-down current I
DD3P
172 164 156 mA
Burst read current I
DD4R
1052 972 900 mA
Burst write current I
DD4W
976 912 852 mA
Burst refresh current (1x REF) I
DD5B
1120 1120 1120 mA
Burst refresh I
PP
current (1x REF) I
PP5B
112 112 112 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
120 120 120 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
140 140 140 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
80 80 80 mA
Auto self refresh current (25°C) I
DD6A
34.4 34.4 34.4 mA
Auto self refresh current (45°C) I
DD6A
80 80 80 mA
Auto self refresh current (75°C) I
DD6A
120 120 120 mA
Bank interleave read current I
DD7
1036 996 956 mA
Bank interleave read I
PP
current I
PP7
60 60 60 mA
Maximum power-down current I
DD8
100 100 100 mA
4GB (x64, SR) 260-Pin DDR4 SODIMM
I
DD
Specifications
X26P4QTWDSPK-13-10265
atf4c512x64hz.pdf – Rev. C 8/16 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
SPD EEPROM Operating Conditions
For the latest SPD data, refer to Micron's SPD page: micron.com/spd.
Table 14: SPD EEPROM DC Operating Conditions
Parameter/Condition Symbol Min Nom Max Units
Supply voltage V
DDSPD
2.5 V
Input low voltage: logic 0; all inputs V
IL
–0.5 V
DDSPD
×
0.3
V
Input high voltage: logic 1; all inputs V
IH
V
DDSPD
×
0.7
V
DDSPD
+
0.5
V
Output low voltage: 3mA sink current V
DDSPD
> 2V V
OL
0.4 V
Input leakage current: (SCL, SDA) V
IN
= V
DDSPD
or V
SSSPD
I
LI
±5 µA
Output leakage current: V
OUT
= V
DDSPD
or V
SSSPD
, SDA in High-Z I
LO
±5 µA
Notes:
1. Table is provided as a general reference. Consult JEDEC JC-42.4 EE1004 and TSE2004 de-
vice specifications for complete details.
2. All voltages referenced to V
DDSPD
.
Table 15: SPD EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units
Clock frequency
t
SCL 10 1000 kHz
Clock pulse width HIGH time
t
HIGH 260 ns
Clock pulse width LOW time
t
LOW 500 ns
Detect clock LOW timeout
t
TIMEOUT 25 35 ms
SDA rise time
t
R 120 ns
SDA fall time
t
F 120 ns
Data-in setup time
t
SU:DAT 50 ns
Data-in hold time
t
HD:DI 0 ns
Data out hold time
t
HD:DAT 0 350 ns
Start condition setup time
t
SU:STA 260 ns
Start condition hold time
t
HD:STA 260 ns
Stop condition setup time
t
SU:STO 260 ns
Time the bus must be free before a new transi-
tion can start
t
BUF 500 ns
Write time
t
W 5 ms
Warm power cycle time off
t
POFF 1 ms
Time from power on to first command
t
INIT 10 ms
Note:
1. Table is provided as a general reference. Consult JEDEC JC-42.4 EE1004 and TSE2004 de-
vice specifications for complete details.
4GB (x64, SR) 260-Pin DDR4 SODIMM
SPD EEPROM Operating Conditions
X26P4QTWDSPK-13-10265
atf4c512x64hz.pdf – Rev. C 8/16 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.
Module Dimensions
Figure 3: 260-Pin DDR4 SODIMM
2.5 (0.1)
MAX
PIN 1
20.0 (0.787)
TYP
1.8 (0.071)
(2X)
0.5 (0.019)
TYP
0.35 (0.014)
TYP
.65 (0.025) R0
(4X)
PIN 259
PIN 260
PIN 2
Front view
2.0 (0.079)
TYP
6.0 (0.236)
TYP
65.6 (2.58)
TYP
2.55 (0.10)
TYP
30.13 (1.186)
29.87 (1.176)
Back view
1.3 (0.051)
1.1 (0.043)
28.5 (1.12)
TYP
35.5 (1.4)
TYP
2.5 (0.98)
TYP
4.0 (0.157)
TYP
38.3 (1.51)
TYP
0.6 (0.24) x 45° (4X)
1.0 (0.039)
TYP
1.75 (0.07)
TYP (2X)
0.25 (0.1) x 45° (2X)
18.0 (0.71)
TYP
4.0 (0.157) TYP (2X)
69.73 (2.745)
69.47 (2.735)
U1
U2
U4
U5
U3
No Components This Side of Module
Notes:
1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000
www.micron.com/products/support Sales inquiries: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
4GB (x64, SR) 260-Pin DDR4 SODIMM
Module Dimensions
X26P4QTWDSPK-13-10265
atf4c512x64hz.pdf – Rev. C 8/16 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2016 Micron Technology, Inc. All rights reserved.

MTA4ATF51264HZ-3G2E1

Mfr. #:
Manufacturer:
Micron
Description:
Memory Modules DDR4 4GB SODIMM
Lifecycle:
New from this manufacturer.
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