1. Product profile
1.1 General description
Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Input internally matched to 50
A gain of 25.8 dB at 250 MHz decreasing to 24.7 dB at 2150 MHz
Output power at 1 dB gain compression = 6 dBm
Supply current = 18.2 mA at a supply voltage of 3.3 V
Reverse isolation > 38 dB up to 2 GHz
Good linearity with low second order and third order products
Noise figure = 3.8 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
BGA2815
MMIC wideband amplifier
Rev. 5 — 29 May 2015 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1V
CC
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN

V\P

BGA2815 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 29 May 2015 2 of 18
NXP Semiconductors
BGA2815
MMIC wideband amplifier
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 2. Ordering information
Type number Package
Name Description Version
BGA2815 - plastic surface-mounted package; 6 leads SOT363
Table 3. Marking
Type number Marking code Description
BGA2815 *E9 * = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled 0.5 +5.0 V
I
CC
supply current - 55 mA
P
tot
total power dissipation T
sp
= 90 C-200mW
T
stg
storage temperature 40 +125 C
T
j
junction temperature - 125 C
P
drive
drive power - 10 dBm
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
sp
=90C 300 K/W
Table 6. Characteristics
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 3.0 3.3 3.6 V
I
CC
supply current 15.7 18.2 21.1 mA
BGA2815 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 29 May 2015 3 of 18
NXP Semiconductors
BGA2815
MMIC wideband amplifier
G
p
power gain f = 250 MHz 25.2 25.8 26.4 dB
f = 950 MHz 24.6 25.3 26.0 dB
f = 2150 MHz 23.2 24.7 26.2 dB
RL
in
input return loss f = 250 MHz 11 13 15 dB
f = 950 MHz 11 13 15 dB
f = 2150 MHz 11 14 20 dB
RL
out
output return loss f = 250 MHz 14 18 23 dB
f = 950 MHz 151617dB
f = 2150 MHz 17 19 22 dB
ISL isolation f = 250 MHz 40 55 76 dB
f = 950 MHz 434546dB
f = 2150 MHz 36 38 41 dB
NF noise figure f = 250 MHz 3.2 3.7 4.2 dB
f = 950 MHz 3.4 3.8 4.3 dB
f = 2150 MHz 3.2 3.7 4.1 dB
B
3dB
3 dB bandwidth 3 dB below gain at 1 GHz 2.8 3.0 3.1 GHz
K Rollett stability factor f = 250 MHz 10 14 20
f = 950 MHz 3.5 4.5 6.5
f = 2150 MHz 1.5 2 2.5
P
L(sat)
saturated output power f = 250 MHz 7 8 8 dBm
f = 950 MHz 3 5 6 dBm
f = 2150 MHz 1+1+2dBm
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz 6 6 7 dBm
f = 950 MHz 3 5 6 dBm
f = 2150 MHz 1+1+2dBm
IP3
I
input third-order intercept point P
drive
= 38 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz 8 6 4dBm
f
1
= 950 MHz; f
2
= 951 MHz 11 8 6dBm
f
1
=2150MHz; f
2
=2151MHz 18 15 12 dBm
IP3
O
output third-order intercept point P
drive
= 38 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 182022dBm
f
1
= 950 MHz; f
2
= 951 MHz 15.5 17.5 19.5 dBm
f
1
=2150MHz; f
2
= 2151 MHz 7.5 10.5 13.5 dBm
P
L(2H)
second harmonic output power P
drive
= 35 dBm
f
1H
= 250 MHz; f
2H
=500MHz 54 52 50 dBm
f
1H
= 950 MHz; f
2H
=1900MHz 46 44 43 dBm
IM2 second-order intermodulation distance P
drive
= 38 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 425364dBc
f
1
= 950 MHz; f
2
=951MHz 395162dBc
Table 6. Characteristics
…continued
V
CC
= 3.3 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit

BGA2815,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 1CH MMIC Amp 3.7 dB 3.3V 18.2mA 3.1GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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