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BGA2815,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
BGA2815 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 29 May 2015 10 of 18
NXP Semiconductors
BGA2815
MMIC wideband amplifier
Table 9. Input power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
i(1dB)
input power at 1 dB gain compression f = 250 MHz
V
CC
=3.0V 19 19 19 dBm
V
CC
=3.3V 18 18 19 dBm
V
CC
=3.6V 18 18 18 dBm
f = 950 MHz
V
CC
=3.0V 19 20 20 dBm
V
CC
=3.3V 19 19 20 dBm
V
CC
=3.6V 19 19 20 dBm
f = 2150 MHz
V
CC
=3.0V 22 23 24 dBm
V
CC
=3.3V 23 23 24 dBm
V
CC
=3.6V 23 23 24 dBm
Table 10. Output power at 1 dB gain compression over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz
V
CC
=3.0V 6 6 5 dBm
V
CC
=3.3V 7 7 6 dBm
V
CC
=3.6V 8 7 6 dBm
f = 950 MHz
V
CC
=3.0V 5 4 3 dBm
V
CC
=3.3V 5 5 4 dBm
V
CC
=3.6V 6 5 4 dBm
f = 2150 MHz
V
CC
=3.0V +2 0 2dBm
V
CC
=3.3V +2 +1 1dBm
V
CC
=3.6V 3 1 0 dBm
BGA2815 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 29 May 2015 11 of 18
NXP Semiconductors
BGA2815
MMIC wideband amplifier
Table 11. Saturated output power over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
P
L(sat)
saturated output power f = 250 MHz
V
CC
=3.0V 7 7 7 dBm
V
CC
=3.3V 8 8 7 dBm
V
CC
=3.6V 9 9 8 dBm
f = 950 MHz
V
CC
=3.0V 5 4 3 dBm
V
CC
=3.3V 5 5 4 dBm
V
CC
=3.6V 6 5 4 dBm
f = 2150 MHz
V
CC
=3.0V +2 +1 1dBm
V
CC
=3.3V +3 +1 1dBm
V
CC
=3.6V 3 2 0 dBm
Table 12. Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IM2 second-order intermodulation distance f
1
= 250 MHz;
f
2
= 251 MHz;
P
drive
= 38 dBm
V
CC
=3.0V 43 47 51 dBc
V
CC
=3.3V 50 55 58 dBc
V
CC
=3.6V 58 62 57 dBc
f
1
= 950 MHz;
f
2
= 951 MHz;
P
drive
= 38 dBm
V
CC
=3.0V 41 44 49 dBc
V
CC
=3.3V 49 53 60 dBc
V
CC
=3.6V 58 64 56 dBc
BGA2815 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 5 — 29 May 2015 12 of 18
NXP Semiconductors
BGA2815
MMIC wideband amplifier
Table 13. Output third-order intercept point over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
IP3
O
output third-order intercept
point
f
1
=250MHz; f
2
= 251 MHz;
P
drive
= 38 dBm
V
CC
=3.0V 18 20 18 dBm
V
CC
=3.3V 20 20 19 dBm
V
CC
=3.6V 23 21 20 dBm
f
1
=950MHz; f
2
= 951 MHz;
P
drive
= 38 dBm
V
CC
=3.0V 18 16 14 dBm
V
CC
= 3.3 V 18.5 17.5 15.5 dBm
V
CC
=3.6V 20 19 17 dBm
f
1
=2150MHz; f
2
= 2151 MHz;
P
drive
= 38 dBm
V
CC
=3.0V 12 10 8 dBm
V
CC
= 3.3 V 11.5 10.5 7.5 dBm
V
CC
=3.6V 13 11 8 dBm
Table 14. 3 dB bandwidth over temperature and supply voltages
Typical values.
Symbol Parameter Conditions T
amb
(C) Unit
40 +25 +85
B
3dB
3 dB bandwidth V
CC
= 3.0 V 2.985 2.917 2.812 GHz
V
CC
= 3.3 V 3.062 2.965 2.857 GHz
V
CC
= 3.6 V 3.119 2.994 2.875 GHz
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BGA2815,115

Mfr. #:
Buy BGA2815,115
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 1CH MMIC Amp 3.7 dB 3.3V 18.2mA 3.1GHz
Lifecycle:
New from this manufacturer.
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