NCV7356
www.onsemi.com
5
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC. The maximum ratings given in
the table below are limiting values that do not lead to a
permanent damage of the device but exceeding any of these
limits may do so. Long term exposure to limiting values
may affect the reliability of the device.
MAXIMUM RATINGS
Rating Symbol Condition Min Max Unit
Supply Voltage, Normal Operation V
BAT
− −0.3 18 V
Short−Term Supply Voltage, Transient V
BAT.LD
Load Dump; t < 500 ms − 40 V (peak)
Jump Start; t < 1.0 min − 27 V
Transient Supply Voltage V
BAT.TR1
ISO 7637/1 Pulse 1 (Note 2) −50 − V
Transient Supply Voltage V
BAT.TR2
ISO 7637/1 Pulses 2 (Note 2) − 100 V
Transient Supply Voltage V
BAT.TR3
ISO 7637/1 Pulses 3A, 3B −200 200 V
CANH Voltage V
CANH
V
BAT
< 27 V −20
40
V
V
BAT
= 0 V −40
Transient Bus Voltage V
CANHTR1
ISO 7637/1 Pulse 1 (Note 3) −50 − V
Transient Bus Voltage V
CANHTR2
ISO 7637/1 Pulses 2 (Note 3) − 100 V
Transient Bus Voltage V
CANHTR3
ISO 7637/1 Pulses 3A, 3B (Note 3) −200 200 V
DC Voltage on Pin LOAD V
LOAD
Via RT > 2.0 kW −40 40 V
DC Voltage on Pins TxD, MODE1, MODE0, RxD V
DC
− −0.3 7.0 V
ESD Capability of CANH
(Note 4)
V
ESDBUS
Human Body Model
(with respect to V
BAT
and GND)
Eq. to Discharge 100 pF with 1.5 kW
−4000 4000 V
ESD Capability of Any Other Pin
(Note 4)
V
ESD
Human Body Model
Eq. to Discharge 100 pF with 1.5 kW
−2000 2000 V
Maximum Latchup Free Current at Any Pin I
LATCH
− −500 500 mA
Storage Temperature T
STG
− −55 150 °C
Junction Temperature T
J
− −40 150 °C
Peak Reflow Soldering Temperature: Pb−Free, 60 s to 150 s above 217°C (Note 5) 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. ISO 7637 test pulses are applied to V
BAT
via a reverse polarity diode and >1.0 mF blocking capacitor.
3. ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1.0 nF.
4. ESD measured per Q100−002 (EIA/JESD22−A114−A).
5. For additional information, please see or download the ON Semiconductor Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.
TYPICAL THERMAL CHARACTERISTICS
Parameter
Test Condition, Typical Value
Unit
Min Pad Board 1, Pad Board
SOIC−8
Junction−to−Lead (psi−JL7, Y
JL8
) or Pins 6−7 57 (Note 6) 51 (Note 7) °C/W
Junction−to−Ambient (R
q
JA
, q
JA
) 187 (Note 6) 128 (Note 7) °C/W
SOIC−14
Junction−to−Lead (psi−JL8, Y
JL8
) 30 (Note 8) 30 (Note 9) °C/W
Junction−to−Ambient (R
q
JA
, q
JA
) 122 (Note 8) 84 (Note 9) °C/W
6. 1 oz copper, 53 mm
2
coper area, 0.062″ thick FR4.
7. 1 oz copper, 716 mm
2
coper area, 0.062″ thick FR4.
8. 1 oz copper, 94 mm
2
coper area, 0.062″ thick FR4.
9. 1 oz copper, 767 mm
2
coper area, 0.062″ thick FR4.
