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NGTG15N120FL2WG

P1-P3P4-P6P7-P9P10-P10
NGTG15N120FL2WG
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Typical Gate Charge
Q
G
, GATE CHARGE (nC)
6040200
0
2
4
6
8
12
14
16
V
GE
, GATE−EMITTER VOLTAGE (V)
100
10
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
Figure 8. Switching Loss vs. Temperature
T
J
, JUNCTION TEMPERATURE (°C)
140120100806040200
SWITCHING LOSS (mJ)
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
Rg = 10 W
E
off
Figure 9. Switching Time vs. Temperature
T
J
, JUNCTION TEMPERATURE (°C)
140120100806040200
1000
SWITCHING TIME (ns)
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 15 A
Rg = 10 W
Figure 10. Switching Loss vs. I
C
I
C
, COLLECTOR CURRENT (A)
2015105
2.5
SWITCHING LOSS (mJ)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
E
off
Figure 11. Switching Time vs. I
C
I
C
, COLLECTOR CURRENT (A)
1000
SWITCHING TIME (ns)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
t
f
t
d(off)
100
t
f
t
d(off)
25 30 35 1510520253035
100
0.9
0.7
0.6
0.4
0.3
0.1
0
40 45
2.0
1.5
1.0
0.5
0
40 45
80 120
0.2
0.5
0.8
NGTG15N120FL2WG
http://onsemi.com
5
TYPICAL CHARACTERISTICS
t
d(off)
Figure 12. Switching Loss vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING LOSS (mJ)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 15 A
55 65 75 85
Figure 13. Switching Time vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING TIME (ns)
1000
55 65 75 85
Figure 14. Switching Loss vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
550500450400350
SWITCHING LOSS (mJ)
800600
V
GE
= 15 V
T
J
= 150°C
I
C
= 15 A
Rg = 10 W
Figure 15. Switching Time vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
1000
Figure 16. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
Figure 17. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1
10
100
1000
V
GE
= 15 V, T
C
= 125°C
1000100101
t
f
t
d(off)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 15 A
100
V
GE
= 15 V
T
J
= 150°C
I
C
= 15 A
Rg = 10 W
t
f
100
1.6
1.4
1.0
0.8
0.6
0.4
0.2
0
0.5
0.4
0.3
0.2
0.1
0
550500450400350 800600
10k
10k
1.2
650 700 750
1.0
0.9
0.8
0.7
0.6
650 700 750
NGTG15N120FL2WG
http://onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 18. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response
ON−PULSE WIDTH (s)
10.10.010.0001
1
SQUARE−WAVE PEAK R(t) (°C/W)
0.00001
50% Duty Cycle
20%
10%
5%
2%
Single Pulse
R
q
JC
= 0.51
Junction
C
1
C
2
R
1
R
2
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
Case
C
n
R
n
0.1
0.01
0.001
0.0001
0.001
R
i
(°C/W) C
i
(J/°C)
0.091186 0.003468
0.000001
0.066118
0.083897
0.201027
0.072182
0.015124
0.037692
0.049745
0.438100
P1-P3P4-P6P7-P9P10-P10

NGTG15N120FL2WG

Mfr. #:
Buy NGTG15N120FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/15A VERY FAST IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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