NGTG15N120FL2WG

Mfr. #:: NGTG15N120FL2WG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 1200V/15A VERY FAST IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: NGTG15N120FL2WG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: NGTG15N120FL2WG Datasheet NGTG15N120FL2WG Datasheet (P4-P6)NGTG15N120FL2WG Datasheet (P7-P9)NGTG15N120FL2WG Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Packaging:: Tube

Brand:: ON Semiconductor

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Tags: NGTG15, NGTG1, NGTG, NGT

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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NGTG15N120FL2WG Description

***ical: Trans IGBT Chip N-CH 1200V 30A 294000mW 3-Pin(3+Tab) TO-247 Tube

***ark: 1200V/15A Very Fast Igbt Fsii To-247/Tube |Onsemi NGTG15N120FL2WG

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel

***i-Key: IGBT TRENCH/FS 1200V 30A TO247-3

***i-Key Marketplace: INSULATED GATE BIPOLAR TRANSISTO

***ical: Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT 1200V 15A FS2-RC Induction Heating

***ark: Igbt, Single, 1.2Kv, 30A, To-247 Rohs Compliant: Yes

***i-Key: IGBT TRENCH/FS 1200V 30A TO247

*** Stop Electro: Insulated Gate Bipolar Transistor

***p One Stop Global: Trans IGBT Chip N-CH 1200V 30A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***ure Electronics: IRG4PH40KDPBF Series 1200 V 15 A N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.74 V Current release time: 220 ns Power dissipation: 160 W

***ment14 APAC: SINGLE IGBT, 1.2KV, 30A; Transistor Type; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:3.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Fall Time Max:330ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:31ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon SCT: 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***ure Electronics: IRG4PH40K Series 1200 V 15 A Through Hole UltraFast IGBT - TO-247AC

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.74V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40KPBF; Fall Time Max:230ns; Fall Time tf:230ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:22ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ical: Trans IGBT Chip N-CH 1200V 30A 294000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: NGTB15N120: 1200 V 30 A 294 W Through Hole Field Stop II IGBT - TO-247-3

***ark: Transistor, Igbt, 1.2Kv, 30A, To-247; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:294W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Onsemi NGTB15N120FL2WG

***ical: Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, 1.2KV, 30A, 175DEG C, 333W; Available until stocks are exhausted

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***ical: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC

***ernational Rectifier: 1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

***or: IGBT W/ULTRAFAST SOFT RECOVERY D

***(Formerly Allied Electronics): MOSFET; 1200V; 30.000A; COPAK-247

***ment14 APAC: IGBT,N CH,1200V,30A,TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:180W

Market price

Part #	Mfg.	Description	Stock	Price
NGTG15N120FL2WG DISTI # NGTG15N120FL2WG-ND	ON Semiconductor	IGBT 1200V 15A TO-247 RoHS: Compliant Min Qty: 120 Container: Tube	Temporarily Out of Stock	120:$2.9484
NGTG15N120FL2WG DISTI # NGTG15N120FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTG15N120FL2WG) RoHS: Compliant Min Qty: 210 Container: Tube	Americas - 0	210:$1.7900 270:$1.7900 480:$1.7900 1050:$1.7900 2100:$1.6900
NGTG15N120FL2WG DISTI # NGTG15N120FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 1200V 30A 3-Pin TO-247 Tube (Alt: NGTG15N120FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€2.0900 10:€1.9900 25:€1.8900 50:€1.7900 100:€1.7900 500:€1.7900 1000:€1.6900
NGTG15N120FL2WG	ON Semiconductor	RoHS: Not Compliant	1200	1000:$2.3500 500:$2.4800 100:$2.5800 25:$2.6900 1:$2.9000
NGTG15N120FL2WG DISTI # 863-NGTG15N120FL2WG	ON Semiconductor	IGBT Transistors 1200V/15A VERY FAST IGBT RoHS: Compliant	206	1:$3.8200 10:$3.2400 100:$2.8100 250:$2.6700 500:$2.4000 1000:$2.0200 2500:$1.9200

Image	Part #	Description
	Mfr.#: NGTG15N120FL2WG OMO.#: OMO-NGTG15N120FL2WG	IGBT Transistors 1200V/15A VERY FAST IGBT
	Mfr.#: NGTG15N60S1EG OMO.#: OMO-NGTG15N60S1EG	IGBT Transistors 15A 600V IGBT
	Mfr.#: NGTG15N120FL2WG OMO.#: OMO-NGTG15N120FL2WG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/15A VERY FAST IGBT
	Mfr.#: NGTG15N60S1EG OMO.#: OMO-NGTG15N60S1EG-ON-SEMICONDUCTOR	IGBT Transistors 15A 600V IGBT
	Mfr.#: NGTG15N120FL2 OMO.#: OMO-NGTG15N120FL2-1190	New and Original
	Mfr.#: NGTG15N60S1 OMO.#: OMO-NGTG15N60S1-1190	New and Original
	Mfr.#: NGTG15N60S1EG(G15N60S1G) OMO.#: OMO-NGTG15N60S1EG-G15N60S1G--1190	New and Original

NGTG15N120FL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes