DocID026413 Rev 4 5/13
SCT20N120 Electrical characteristics
Table 6. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
E
on
Turn-on switching losses
V
DD
= 800 V, I
D
= 10 A
R
G
=6.8 Ω, V
GS
= -2/20 V
- 160 - µJ
E
off
Turn-off switching losses - 90 - µJ
E
on
Turn-on switching losses V
DD
= 800 V, I
D
= 10 A
R
G
=6.8 Ω, V
GS
= -2/20 V
T
J
= 150 °C
- 165 - µJ
E
off
Turn-off switching losses - 100 - µJ
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)V
Turn-on delay time
V
DD
= 800 V, I
D
= 10 A,
R
G
= 0 Ω, V
GS
= 0/20 V
-10-ns
t
f(V)
Fall time - 17 - ns
t
d(off)V
Turn-off delay time - 27 - ns
t
r(V)
Rise time - 16 - ns
Table 8. Reverse SiC diode characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
SD
Diode forward voltage I
F
= 5 A, V
GS
= -5 V - 3.6 - V
t
rr
Reverse recovery time
I
SD
=10 A, V
GS
=-5V,
V
R
=800V,
dif/dt = 1650 A/µs
-15-ns
Q
rr
Reverse recovery charge - 75 - nC
I
rrm
Peak reverse recovery current - 8 - A
