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SCT20N120
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
DocID026413 Rev 4
7/13
SCT20N12
0
Electri
cal character
istics
Figure 8. Body diode characteristics
@ T
J
= 25 °
C
Figure 9. Body diode characteristics
@ T
J
= 150 °C
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Figure 10. 3
rd
quadr
ant charact
eristics
@ T
J
= -5
0 °C
Figure 1
1. 3
rd
quadr
ant charact
eristics
@ T
J
= 25 °C
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Figure 12. 3
rd
quadr
ant charact
eristics
@ T
J
= 1
50 °C
Figure 13. Normalized V
TH
vs. tempera
ture
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Electric
al chara
cterist
ics
SCT20N
120
8/13
D
ocID02
6413 Rev 4
Figure 14. Normalized R
DS(on)
vs. te
mperature
Figure 15
. Capacit
ances v
ariation
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DocID026413 Rev 4
9/13
SCT20N12
0
Test circu
its
3 T
est
circuits
Figure 1
6. Switchin
g test wave
forms f
or
transition ti
mes
Figure 17. Clamped inductive switching
wavefo
rm
*,3'
)65
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P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
SCT20N120
Mfr. #:
Buy SCT20N120
Manufacturer:
STMicroelectronics
Description:
MOSFET 1200V silicon carbide MOSFET
Lifecycle:
New from this manufacturer.
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SCT20N120