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SC1112TSTRT

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
POWER MANAGEMENT
1
www.semtech.com
SC1112
Triple Low Dropout
Regulator Controllers
Features
Applications
Revision: August 30, 2006
Typical Application Circuit
Description
The SC1112 was designed for the latest high speed
motherboards. It includes three low dropout regulator con-
trollers. The controllers provide the power for the system
AGTL bus Termination Voltage, Chipset, and clock circuitry.
An adjustable controller with a 1.2V reference is available,
while two selectable outputs are provided for the VTT
(1.25 V or 1.5V, SC1112) or (1.2V or 1.5V, SC1112A)
and the AGP (1.5V or 3.3V). The SC1112 low dropout
regulators are designed to track the 3.3V power supply
as the VTTIN supply is cycled On and Off. A latched short
circuit protection is also available for the VTT output.
Other features include an integrated charge pump that
provides adequate gate drives for the external MOSFETs,
and a capacitive programable delay for the power good
signal.
Triple linear controllers
Selectable and adjustable output voltages
LDOs track input voltage within 200mV (Function of
the MOSFETs used) until regulation
Integrated charge pump
Programmable power good delay signal
Latched over current protection (VTT)
Pb-free package available, fully WEEE and RoHS
compliant
Pentium
®
III Motherboards
Triple power supplies
Q1
RA
SC1112/A
PWRGD
DELAY
5VSTBY
VTTSEL
AGPSEL
GND
FC
CAP+
CAP- VTTGATE
VTTSEN
AGPGATE
AGPSEN
ADJGATE
ADJSEN
VTTIN
A
DJ
Q2 C14
330u
C12
330u
AGP SELECT Signal
C8
330u
AGP
C17
0.1u
RB
C16
330u
C3
0.1u
C1
10u
C18
330u
VTT SELECT Signal
POWER GOOD
C5
22n
C10
1u
C13
0.1u
+3.3V
R1
1K
+5V STBY
Q3
C11
0.1u
C9
0.1u
VTT
C6
330u
VTT
C19
330u
C2
22006 Semtech Corp.
www.semtech.com
POWER MANAGEMENT
SC1112
Electrical Characteristics
Absolute Maximum Ratings
retemaraPlobmySmumixaMstinU
DNGotYBTSV5 7+ot3.0-V
DNGotNESTTV 5ot3.0-V
DNGotNESPGA 5ot3.0-V
DNGotNESJDA 5ot3.0-V
egnaRerutarepmeTgnitarepOT
A
07+ot0C°
egnaRerutarepmeTnoitcnuJT
J
521+ot0C°
egnaRerutarepmeTegarotST
GTS
051+ot56-C°
.ceS01)gniredloS(erutarepmeTdaeLT
L
003C°
tneibmAotnoitcnuJecnatsiseRlamrehT
CIOS
POSST
θ
AJ
031
511
W/C°
esaCotnoitcnuJecnadepmIlamrehT
CIOS
POSST
θ
CJ
03
83
W/C°
)ledoMydoBnamuH(gnitaRDSEDSE2Vk
Unless specified: 5VSTBY=4.75V to 5.25V; VTTIN=3.3V; T
A
= 25°C
retemaraPlobmySsnoitidnoCniMpyTxaMstinU
)YBTSV5(ylppuS
egatloVylppuS
YBTSV5
57.4552.5V
tnerruCylppuS
I
YBTSV5
YBTSV5V5=6 8 21Am
noitcetorPtiucriCtrohSTTV
dlohserhTremiTyaleDtiucriCtrohSTTV
)4(
CS
hT
5.1V
emiTyaleDtiucriCtrohSTTV
)4(
CS
dt
CS*yaledC(
HT
I/)
CS
S
tnerruCecruoSyaleDtiucriCtrohSTTV
)4(
I
CS
612282Aµ
dlohserhTtiucriCtrohSTTV
)4(
CSTTV
hT
056007057Vm
dooGrewoPTTV
dlohserhTremiTyaleDDGRWP
)5(
GP
HT_yaleD
054.1005.1055.1V
dlohsaerhTDGRWP
)5(
GP
2.1_HT
060.1580.1011.1V
dlohsaerhTDGRWP
)5(
GP
5.1_HT
033.1053.1093.1V
emiTyaleDDGRWP
)5(
GP
2.1_dt
GP*yaledC(
2.1_HT
I/)
GP
S
emiTyaleDDGRWP
)5(
GP
5.1_dt
GP*yaledC(
5.1_HT
I/)
GP
S
tnerruCecruoSDGRWP
)5(
I
GP
612282Aµ
snoitceSraeniL
dlohserhTylppuStupnITTV
NITTV
HT
54.125.155.1V
ecnereffiDgnikcarT
)3()1(
atleD
KCART
V
NI
,V03.3=
I
O
A0=
002Vm
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied.
3
2006 Semtech Corp.
www.semtech.com
POWER MANAGEMENT
SC1112
retemaraPlobmySsnoitidnoCniMpyTxaMstinU
).tnoC(snoitceSraeniL
TTVegatloVtuptuO)A2111CS(
TTV
2.1
I
O
WOL=LESTTV,A2ot0=671.1002.1422.1V
)2111CS(
TTV
52.1
I
O
WOL=LESTTV,A2ot0=522.1052.1572.1
TTV
5.1
I
O
HGIH=LESTTV,A2ot0=074.1005.1035.1V
PGAegatloVtuptuOPGA
5.1
I
O
WOL=LESPGA,A2ot0=074.1005.1035.1V
PGA
3.3
I
O
HGIH=LESPGA,A2ot0=432.3003.3V
JDAegatloVtuptuOJDAI
O
A2ot0=%2-)BR/AR+1(*2.1%2+V
tnerruCsaiBNESTTV
)2111CS(
saibI
NESTTV
09021041Aµ
tnerruCsaiBNESTTV
)A2111CS(
saibI
NESTTV
15Aµ
tnerruCsaiBNESPGAsaibI
NESPGA
011051071Aµ
tnerruCsaiBNESJDAsaibI
NESJDA
15Aµ
tnerruCetaGTTVecruosI
etagTTV
V0.3=etagV,V57.4=YBTSV5005Aµ
knisI
etagTTV
005Aµ
tnerruCetaGPGAecruosI
etagPGA
V0.3=etagV,V57.4=YBTSV5005Aµ
knisI
etagPGA
005Aµ
tnerruCetaGJDAecruosI
etagJDA
V0.3=etagV,V57.4=YBTSV5005Aµ
knisI
etagJDA
005Aµ
noitalugeRdaoLDAOL
GER
I,V03.3=NITTV
O
A2ot0=3.0%
noitalugeReniLENIL
GER
,V74.3otV31.3=NITTV
A2=oI
3.0%
)LOA(niaG
)2(
NIAG
ODL
ETAGottuptuOSODL05Bd
Electrical Characteristics (Cont.)
Unless specified: 5VSTBY=4.75V to 5.25V; VTTIN=3.3V; T
A
= 25°C
Notes:
(1) All electrical characteristics are for the application circuit on page 19.
(2) Guaranteed by design
(3) Tracking Difference is defined as the delta between 3.3V Vin and the VTT, AGP, ADJ output voltages during the linear ramp up until
regulation is achieved. The Tracking Voltage difference might vary depending on MOSFETs Rdson, and Load Conditions.
(4) During power up, an internal short circuit glitch timer will start once the VTT Input Voltage exceeds the VTTIN
TH
(1.5V). During the glitch
timer immunity time, determined by the Delay capacitor (Delay time is approximately equal to (Cdelay*SCTH)/ISC), the short circuit
protection is disabled to allow VTT output to rise above the trip threshold (0.7V). If the VTT output has not risen above the trip
threshold after the immunity time has elapsed, the VTT output is latched off and will only be enabled again if either the VTT input
voltage or the 5VSTBY is cycled.
(5) PWRGD pin is kept low during the power up, until the VTT output has reached its PG
td1.2
or PG
td1.5
level. At that time the PWRGD
source current I
PG
(20uA) is enabled and will start charging the external PWRGD delay capacitor connected to the DELAY pin. Once the
capacitor is charged above the PG
Delay_TH
(1.5V), the PWRGD pin is released from ground.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

SC1112TSTRT

Mfr. #:
Buy SC1112TSTRT
Manufacturer:
Semtech
Description:
Power Management Specialized - PMIC TRIPLE LOW DRPOUT REG CONTRL
Lifecycle:
New from this manufacturer.
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