162006 Semtech Corp.
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POWER MANAGEMENT
SC1112
Theory Of Operation
The SC1112 was designed for the latest high speed mother
boards requiring a controlled power up sequencing of
the Outputs, and a programmable delay for the Power
good signal.
Three Linear controllers have been incorporated into the
SC1112. The VTT output can be programmed to either a
1.250V or a 1.500V by applying a LOW or a HIGH control
signal to the VTTSEL pin. AGP output can also be pro-
grammed via AGPSEL pin to a 1.50V or a 3.30V. The
SC1112 also provides an Adjustable output which utilizes
a resistive voltage divider.
The +5VSTBY supply will power the internal Reference,
Charge Pump, Oscillator, and the Fet controllers. After
the +5VSTBY has been established, LDO outputs will track
the VTTIN (3.30V) supply as it is applied.
An external capacitor connected to the Delay pin will pro-
gram the VTT short circuit delay time (SC
td
), and the PWRGD
delay time (PG
td
).
During power up, an internal short circuit glitch timer will
start once the VTT Input Voltage exceeds the VTTIN
TH
(1.5V).
During the glitch timer immunity time, determined by the
Delay capacitor (Delay time is approximately equal to
(Cdelay*SCTH)/ISC), the short circuit protection is disabled
to allow VTT output to rise above the trip threshold (0.7V).
If the VTT output has not risen above the trip threshold
after the immunity time has elapsed, the VTT output is
latched off and will only be enabled again if either the VTT
input voltage or the 5VSTBY is cycled.
PWRGD pin is kept low during the power up, until the VTT
output has reached its PG
td1.25
or PG
td1.5
level. At that time
the PWRGD source current I
PG
(20uA) is enabled and will
start charging the external PWRGD delay capacitor
connected to the DELAY pin. Once the capacitor is charged
above the PG
Delay_TH
(1.5V), the PWRGD pin is released from
ground. A detailed timing diagram is shown on pages 4 to
5.
Also included is an overcurrent protection circuit that
monitors the VTT voltage. If the output voltage drops
below 700mV, as would occur during an overcurrent or
short condition, the device will pull the drive pin low and
latch off the output.
Fixed Output Voltage Options (VTT, AGP)
Please refer to the Application Circuit on Page 1. The VTT
and the AGP fixed output voltage can be programed from
a Control logic signal. Table below shows the possible
voltages:
LESTTVLESPGATTVPGA
00 V52.1V05.1
01 V52.1V03.3
10 V05.1V05.1
11 V05.1V03.3
Once the VTTSEL or the AGPSEL signal is established, an
internal resistive divider is used to compare the bandgap
reference voltage with the feedback output voltage. The
drive pin voltage is then adjusted to
maintain the output voltage set by the internal resistor
divider. Referring to the block diagram on page 8.
It is possible to adjust the output voltage of the VTT or
AGP, by applying an external resistor divider to the sense
pin (please refer to Figure 1 on Page 17). Since the sense
pin sinks a nominal 100µA, the resistor
values should be selected to allow 10mA to flow through
the divider. This will ensure that variations in this current
do not adversely affect output voltage regulation. Thus a
target value for R2 (maximum) can be calculated:
mA10
V
2R
)FIXED(OUT
The output voltage can only be adjusted upwards from
the fixed output voltage, and can be calculated using the
following equation:
VoltsA1001R
2R
1R
1VV
)FIXED(OUT)ADJUSTED(OUT
µ+
+=
Applications Infomation
17
2006 Semtech Corp.
www.semtech.com
POWER MANAGEMENT
SC1112
Adjustable Output Voltage Option
The adjustable output voltage option does not have an
internal resistor divider. The adjust pin connects directly to
the inverting input of the error amplifier, and the
output voltage is set using external resistors (please
refer to Figure 2). In this case, the adjust pin sources a
nominal 0.5µA, so the resistor values should be selected
to allow 50µA to flow through the divider. Again, a target
value for RB (maximum) can be
calculated:
A50
V200.1
RB
µ
The output voltage can be calculated as follows:
RAA5.0
RB
RA
1200.1V
OUT
+= µ
The maximum output voltage that can be obtained from
the adjustable option is determined by the input supply
voltage and the R
DS(ON)
and gate threshold voltage of the
external MOSFET. Assuming that the MOSFET gate
threshold voltage is sufficiently low for the output
voltage chosen and a worst-case drive voltage of 9V, V
OUT(MAX)
is given by:
)MAX)(ON(DS)MAX(OUT)MIN()MAX(OUT
RIVTTINV =
Applications Infomation (Cont.)
Figure 1: Adjusting The Output Voltage of VTT or AGP
Q1
SC1112
PWRGD
DELAY
5VSTBY
VTTSEL
AGPSEL
GND
FC
CAP+
CAP- VTTGATE
VTTSEN
AGPGATE
AGPSEN
ADJGATE
ADJSEN
VTTIN
C14
330u
AGP SELECT Signal
C8
330u
AGP
C17
0.1u
C16
330u
C3
0.1u
C1
10u
C18
330u
VTT SELECT Signal
+3.3V
+5V STBY
Q3
C9
0.1u
VTT
C19
330u
C2
R1
R2
RA
SC1
1
PWRGD
DELAY
5VSTBY
FC
CAP+
CAP-
ADJGATE
ADJSEN
Q2
C12
330u
RB
POWER GOOD
C5
22n
C10
1u
C13
0.1u
R1
1K
C11
0.1u
C6
330u
VTT
Figure 2
182006 Semtech Corp.
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POWER MANAGEMENT
SC1112
Short Circuit Protection
The VTT short circuit protection feature of the SC1112
is implemented by using the R
DS(ON)
of the MOSFET. As
the output current increases, the regulation loop main-
tains the output voltage by turning the FET on more and
more. Eventually, as the R
DS(ON)
limit is reached, the MOS-
FET will be unable to turn on any further, and the output
voltage will start to fall. When the VTT output voltage falls
to approximately 700mV, the LDO controller is latched off,
setting output voltage to 0V. Power must be cycled to re-
set the latch.
To prevent false latching due to capacitor inrush currents
or low supply rails, the current limit latch is initially
disabled. It is enabled once the short circuit delay time
has elapsed. Timing diagram on pages 4 to 5 will show a
detailed operation of the Short Circuit protection circuitry.
To be most effective, the MOSFET R
DS(ON)
should not be
selected artificially low. The MOSFET should be
chosen so that at maximum required current, it is almost
fully turned on. If, for example, a supply of 1.5V at 4A is
required from a 3.3V ± 5% rail, the maximum allowable
R
DS(ON)
would be:
()
=
m400
4
025.15.13.395.0
R
)MAX)(ON(DS
To allow for temperature effects 200m would be a
suitable room temperature maximum, allowing a peak
short circuit current of approximately 15A for a short time
before shutdown.
Capacitor Selection
Output Capacitors: Low ESR aluminum electrolytic or tan-
talum capacitors are recommended for bulk
capacitance, with ceramic bypass capacitors for decoupling
high frequency transients.
Input Capacitors: Placement of low ESR aluminum
electrolytic or tantalum capacitors at the input to the
MOSFET (VTTIN) will help to hold up the power supply
during fast load changes, thus improving overall transient
response. The +5VSTBY supply should be bypassed with a
10µF ceramic capacitor.
Layout Guidelines
One of the advantages of using the SC1112 to drive an
external MOSFET is that the bandgap reference and
control circuitry do not need to be located right next to the
power device, thus a very accurate output voltage can be
obtained since heating effects will be minimal.
The 0.1µF bypass capacitor should be located close to the
+5VSTBY supply pin, and connected directly to the ground
plane. The ground pin of the device should also be con-
nected directly to the ground plane. The sense or adjust
pin does not need to be close to the output voltage plane,
but should be routed to avoid noisy traces if at all pos-
sible.
Power dissipation within the device is practically
negligible, requiring no special consideration during
layout.
Applications Infomation (Cont.)

SC1112TSTRT

Mfr. #:
Manufacturer:
Semtech
Description:
Power Management Specialized - PMIC TRIPLE LOW DRPOUT REG CONTRL
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