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MURS320T3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
June, 2017 − Rev. 16
1 Publication Order Number:
MURS320T3/D
MURS320T3G, SURS8320T3G,
MURS340T3G, SURS8340T3G,
MURS360T3G, SURS8360T3G
Surface Mount
Ultrafast Power Rectifiers
This series employs the state−of−the−art epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for high
voltage, high frequency rectification, or as free wheeling and
protection diodes, in surface mount applications where compact size
and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• High Temperature Glass Passivated Junction
• Low Forward Voltage Drop
(0.71 to 1.05 Volts Max @ 3.0 A, T
J
= 150°C)
• SURS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 217 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 16 mm Tape and Reel, 2500 units per reel
• Polarity: Polarity Band on Plastic Body Indicates Cathode Lead
• Device Meets MSL1 Requirements
• ESD Ratings:
♦ Machine Model, C (> 400 V)
♦ Human Body Model, 3B (> 8 kV)
Device Package Shipping
†
ORDERING INFORMATION
ULTRAFAST
RECTIFIERS
3.0 AMPERES
200−600 VOLTS
MARKING DIAGRAM
U3 = Specific Device Code
x = D (320T3)
= G (340T3)
= J (360T3)
A = Assembly Location**
Y = Year
WW= Work Week
MURS360T3G SMC
(Pb−Free)
2,500 /
Tape & Reel
MURS340T3G SMC
(Pb−Free)
2,500 /
Tape & Reel
MURS320T3G SMC
(Pb−Free)
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
www.onsemi.com
SURS8320T3G* SMC
(Pb−Free)
2,500 /
Tape & Reel
SURS8340T3G* SMC
(Pb−Free)
2,500 /
Tape & Reel
SURS8360T3G* SMC
(Pb−Free)
2,500 /
Tape & Reel
SMC 2−LEAD
CASE 403AC
AYWW
U3xG
G
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
may be blank.
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol
MURS320T3G/
SURS8320T3G
MURS340T3G/
SURS8340T3G
MURS360T3G/
SURS8360T3G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200 400 600 V
Average Rectified Forward Current I
F(AV)
3.0 @ T
L
= 140°C
4.0 @ T
L
= 130°C
3.0 @ T
L
= 130°C
4.0 @ T
L
= 115°C
3.0 @ T
L
= 130°C
4.0 @ T
L
= 115°C
A
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
I
FSM
100
A
Operating Junction Temperature T
J
*65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
R
q
JL
11 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 3.0 A, T
J
= 25°C)
(i
F
= 4.0 A, T
J
= 25°C)
(i
F
= 3.0 A, T
J
= 150°C)
v
F
0.875
0.89
0.71
1.25
1.28
1.05
1.25
1.28
1.05
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
i
R
5.0
150
10
250
10
250
mA
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
(i
F
= 0.5 A, i
R
= 1.0 A, I
REC
to 0.25 A)
t
rr
35
25
75
50
75
50
ns
Maximum Forward Recovery Time
(i
F
= 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V)
t
fr
25 50 50
ns
Typical Peak Reverse Recovery Current
(I
F
= 1.0 A, di/dt = 50 A/ms)
I
RM
0.8 A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G,
SURS8360T3G
www.onsemi.com
3
MURS320T3G/SURS8320T3G
Figure 1. Typical Forward Voltage
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.3 0.60.4 0.8
3.0
0.2
0.1
2.0
0.7
0.7
0.3
0.5
5.0
, INSTANTANEOUS FORWARD CURRENT (A)
F
0.9
V
R
, REVERSE VOLTAGE (VOLTS)
06040 100 120
40
80
0.008
0.004
0.002
0.8
0.4
0.2
20
4.0
2.0
8.0
T
J
= 175°C
I
R
20 80 200
Figure 2. Typical Reverse Current*
T
C
, CASE TEMPERATURE (°C)
19090
1.0
2.0
3.0
4.0
5.0
I
F(AV)
0
6.0
7.0
8.0
9.0
10
100 110 120 130 140 150 160 170 180
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
0 1.51.0
0
2.0
1.0
3.0
5.0
4.0
10
7.0
6.0
P
0.5 5.0
Figure 3. Power Dissipation
Figure 4. Current Derating, Case
010
20
30
40
60
200
10
20 30 40 100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
0.5
1.0
1.0 1.1 1.2
100°C
T
J
= 175°C
25°C
160 180
140
0.08
0.04
0.02
, REVERSE CURRENT ( A)m
T
J
= 100°C
T
J
= 25°C
3.02.52.0 4.54.03.5
9.0
8.0
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if V
R
is sufficiently below
rated V
R
.
RATED VOLTAGE APPLIED
R
q
JL
= 11°C/W
T
J
= 175°C
C, CAPACITANCE (pF)
SQUARE WAVE
dc
, AVERAGE FORWARD CURRENT (A)
TYPICAL CAPACITANCE AT 0 V = 135 pF
dc
SQUARE WAVE
(CAPACITIVELOAD)
I
PK
I
AV
+ 20
10
5.0
i
, AVERAGE POWER DISSIPATION (W))
F(AV)
50 60 70 80 90
80
100
0.2
P1-P3P4-P6

MURS320T3G

Mfr. #:
Buy MURS320T3G
Manufacturer:
ON Semiconductor
Description:
Rectifiers 200V 3A Ultrafast
Lifecycle:
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